The interdigitated back contact (IBC) solar cells developed at the Australian National University have resulted in an independently confirmed (Fraunhofer Institut für Solare Energiesysteme (ISE) CalLab) designated-area efficiency of 24.4 ± 0.7%, featuring short-circuit current density of 41.95mA/cm, open-circuit voltage of 703mV and 82.7% fill factor. The cell, 2 × 2 cm in area, was fabricated ...

Results are presented from the photoluminescence properties of C-doped Si-rich thin film oxides implanted with Er, as investigated for various postdeposition implantation and subsequent annealing and passivation conditions. In particular, it was found that the near-infrared Er luminescence intensity can be increased by up to a factor of $4 after a postdeposition anneal at temperatures of 300–11...

This work aims to optimize Plasma-Enhanced Chemical Vapour Deposition (PECVD) amorphous hydrogenated silicon carbide (a-SiC:H) as a conformal passivation layer for invasive microelectrode array (MEA) neural interface applications. By carefully tuning the PECVD deposition parameters, composition, structure, electrical, and mechanical properties of films can be optimized high resistivity, low str...

Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (~11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The ...

Thick (150 nm) hydrogenated intrinsic amorphous silicon ((i) a-Si:H) layers, which are deposited with different recipes on crystalline silicon (c-Si) by plasma enhanced chemical vapour deposition (PECVD) are investigated by minority carrier lifetime measurements (τeff) and capacitance-voltage C(V) spectroscopy during thermal treatment. The minority carrier lifetime measurements permit an evalua...

The interface between hafnium oxide grown by atomic layer deposition and (100) GaAs treated with HCl cleaning and (NH4)2S passivation has been characterized. Synchrotron radiation photoemission core level spectra indicated successful removal of the native oxides and formation of passivating sulfides on the GaAs surface. Layer-bylayer removal of the hafnia film revealed a small amount of As2O3 f...

In this study, the pitting behaviour of a new corrosion-resistant alloy steel (CR) is compared to that of low-carbon steel (LC) in a simulated concrete pore solution with a chloride concentration of 5 mol/L. The electrochemical behaviour of the bars was characterised using linear polarisation resistance (LPR) and electrochemical impedance spectroscopy (EIS). The pitting profiles were detected b...

The optical properties of semiconductor nanocrystals (SC NCs) are largely controlled by their size and surface chemistry, i.e., the chemical composition and thickness of inorganic passivation shells and the chemical nature and number of surface ligands as well as the strength of their bonds to surface atoms. The latter is particularly important for CdTe NCs, which - together with alloyed CdxHg1...

The inherent problem of a zero-band gap in graphene has provided motivation to search for the next-generation electronic materials including transition metal dichalcogenides, such as MoS2. In this study, a triangular MoS2 quantum dot (QD) is investigated to see the effects of passivation, additional layer, and the h-BN substrate on its geometry, energetics, and electronic properties. The result...

Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO2 ...