In an infrared photodetector, noise current (dark current) is generated throughout the volume of detector. Reducing will reduce dark current, but corresponding smaller area also received signal. By using a separate antenna to receive light, one can detector without reducing signal, thereby increasing its signal ratio (SNR). Here, we present dielectric resonator (DRA) coupled photodetector. Its ...

This study compares the gastroprotective effects of colloidal bismuth subcitrate (DeNol) with those of sucralfate and a methylated analogue of prostaglandin E2 (PGE2) against acute gastric lesions induced by acidified aspirin and absolute ethanol in rats. Both De-Nol and sucralfate given orally prevented dose dependently the formation of gastric lesions by these ulcerogens, DeNol being, respect...

The deformation characteristics of GaSb are investigated by employing nano-scratch tests to understand the material removal mechanism during ultra-precision grinding. nano-scratches obtained a cube-corner tip under two linear normal load conditions (0–30 mN and 0–60 mN). force/scratch distance-penetration depth curves chips cracks analyzed transition ductile brittle removal. In addition, maximu...

Towards the demonstration of sub-10 nm III-V vertical fin and nanowire MOSFETs, a novel alcohol-based digital-etch technology has been developed. The new technique minimizes the mechanical forces exerted on vertical nanowire structures. A consistent 1 nm/cycle etching rate on both InGaAs and InGaSb-based heterostructures has been obtained. This is the first demonstration of digital etch on anti...

We performed the 1/f noise measurements on n-channel indium antimonide ~InSb! metal–oxide– semiconductor field-effect transistors ~MOSFETs! biased in linear and saturation regions operated at 77 K. Through the investigation of the dependence of drain voltage noise power spectral density on gate and drain bias, we have estimated the oxide–semiconductor interface trap density as a function of ene...

Numerical device modeling is used to study p-channel FETs with InSb, GaSb and InGaSb channels. To be as realistic as possible, the basic parameters are chosen to be those measured experimentally in state-ofthe-art high-mobility materials, and where possible, predictions are compared against published data. Confinement effects are captured in the simulations using the density-gradient descriptio...