In this work, the interfacial thermal transport across silicene and various substrates, i.e., crystalline silicon (c-Si), amorphous silicon (a-Si), crystalline silica (c-SiO2) and amorphous silica (a-SiO2) are explored by classical molecular dynamics (MD) simulations. A transient pulsed heating technique is applied in this work to characterize the interfacial thermal resistance in all hybrid sy...

We report an unexpected temperature dependence of the electron-spin-resonance linewidth DHPP for the silicon D-center resonance in polycrystalline silicon. Distinct temperature dependences were found in asprepared and hydrogen-passivated polycrystalline silicon. This observation invalidates the identification of this resonance with a static dangling bond, and changes the perspective on similar ...

Solid state X-ray detectors based on large-area amorphous semiconductors such as amorphous silicon or selenium have been developed. The requirements for various applications in medical diagnosis determine the boundary conditions for different detectors. Key parameters are image receptor size, spatial resolution, image frequency, signal-to-noise ratio, and long-term stability. Conventional thora...

Amorphous Si–(B–)C–N polymer-derived ceramics (PDCs) with a boron contentranging from 0 to 8.3 at.% were synthesized by thermolysis of the boron-modifiedpoly(methylvinylsilazane). Correlation of the boron content and the thermal stability ofthese materials in the course of annealing were investigated using high temperaturethermal gravimetric analysis (HT-TGA). Furthermore, t...