A multilayer crossbar array has been developed using amorphous metal-oxide semiconductor (AOS) thin films and implemented into a neuromorphic system. The structure can be realized, because the AOS deposited by simple sputtering method without heat treatment, which does not damage underlying structures. First, Au are vapor evaporation as electrodes, an In-Ga-Zn-O (α-IGZO) film is conductance cha...

RF-sputtered gallium tin zinc oxide (GSZO) thin films for application in transparent amorphous oxide semiconductors (TAOSs) have been investigated. Morphological, structural, electrical, optical properties and its mechanical robustness have been studied on polyethylene naphthalate (PEN) substrates using variety of characterization techniques. The films deposited on PEN substrates retained amorp...

The initial stages of interfacial interactions between Ag nanoparticles and amorphous Ge (a-Ge) films, in particular the mechanism kinetics metal-induced crystallization (MIC) a-Ge films are investigated herein. Unsupported Ag-Ge formed by PVD were used as a model. In situ high-resolution (S)TEM low-loss monochromated STEM-EELS techniques for real-time observation nucleation growth crystalline ...