In this paper a method for choosing appropriate transistor topology for use with transistor sizing is presented. In combinatorial blocks of static CMOS circuits transistor sizing can be applied for delay balancing in order to guarantee synchronously arriving signal slopes at the input of logic gates. Since the delay of a logic gate depends directly on transistor sizes, the variation of channel-...

In this paper, a new method of transistor chaining for 1-D automatic leaf cell synthesis is presented. The method allows synthesis of cells suitable for row-based layouts with no restrictions imposed on network topologies/transistor sizes. The novelty of the solution arises from transistor chaining with integrated dynamic transistor folding. We provide the theoretical analysis of transistor fol...

Development of all-magnetic transistor with favorable properties is an important step towards a new paradigm of all-magnetic computation. Recently, we showed such possibility in a Magnetic Vortex Transistor (MVT). Here, we demonstrate enhanced amplification in MVT achieved by introducing geometrical asymmetry in a three vortex sequence. The resulting asymmetry in core to core distance in the th...

Graphene, after its first production in 2004 have received lots of attentions from researchers because of its unique properties. High mobility, high sensitivity, high selectivity and high surface area make graphene excellent choice for bio application. One of promising graphene base device that has amazingly high sensitivity is graphene field-effect transistor (GFET). This review selectively su...

A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...

The switching thresholds of magnetophoretic transistors for sorting cells in microfluidic environments are characterized. The transistor operating conditions require short 20-30 mA pulses of electrical current. By demonstrating both attractive and repulsive transistor modes, a single transistor architecture is used to implement the full write cycle for importing and exporting single cells in sp...

In this study, a W-band GaN single-pole single-throw (SPST) switch was designed. To realize the pass and isolation modes of SPST switch, we proposed design technique unit branch consisting one transistor transmission. The characteristic impedance length transmission line were determined by angle at which straight connecting impedances on off states meets real axis Smith chart. Using technique, ...

The electronic properties of a field-effect transistor with two different structures MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as the channel material in presence biaxial strain are investigated. band show that these compounds semiconductors an indirect bandgap. Their gaps can be adjusted by applying in-plane strain. In following, variation energies valleys corresponding effective masses respec...

This work presents a high efficiency RF-to-DC conversion circuit composed of an LC-CL balun-based Gm-boosting envelope detector, low noise baseband amplifier, and offset canceled latch comparator. It was designed to have sensitivity with power consumption for wake-up receiver (WuRx) applications. The proposed detector is based on fully integrated inductively degenerated common-source amplifier ...