This paper presents an improved linearity variable-gain amplifier (VGA) in 0.18-µm CMOS technology. The lineari­ty improvement is resulted from employing a new combinational technique, which utilizes third-order-intermodulation (IM3) cancellation mechanism using second-order-intermodul­ation (­IM2) injection, and intermodulation distortion (IMD) sinking techniques. The proposed VGA gain cell co...

Organic thin-film transistor (OTFT) dielectric layers that selfassemble and enable transistor function at low voltages have been developed by a team of chemists. Myung-Han Yoon et al. developed working transistors that employ organosilane-based dielectric layers that organize themselves from solution. The resulting dielectric films are 2.3–5.5 nm thick, smooth, and nearly defect-free. The films...

We report the fabrication, at low-temperature, of solution processed graphene transistors based on carefully engineered graphene/organic dielectric interfaces. Graphene transistors based on these interfaces show improved performance and reliability when compared with traditional SiO(2) based devices. The dielectric materials investigated include Hyflon AD (Solvay), a low-k fluoropolymer, and va...

Although CMOS Time-of-Flight Range Image Sensors have been recently realized, the fabrication process is modified by inserting an extra mask layer to allow efficient TOF dependent charge transfer. This work focuses on the selection procedure of amplifiers to be used in the design of the TOF pixel using the standard CMOS process. From our analysis, it is found that the Cascode amplifier is the b...

In this work, a detailed comparison of four equivalent charge-sensitive, folded-cascode amplifiers in terms of noise performance is presented. A couple of complementary structures, one with a noise-optimised input nMOSFET and the other with a noise-optimised input pMOSFET were designed in 0.35 μm CMOS process by Austria MicroSystems (AMS). Another couple of complementary structures consisting o...

In this paper, a low Power, Gain Boosted Recycling Folded Cascode Operational Transconductance Amplifier (GB-RFC OTA) is described. The proposed GB-RFC OTA is designed using 130nm CMOS technology and achieves enhanced gain, unity gain bandwidth and slew rate with the low Power budget. The proposed circuit operates on 1V supply voltage and 200 μA bias current and consumes a power of 798μW.The GB...

First, we create a MOS-NDR (negative differential resistance) cell and then put two MOS-NDR cells in cascode (totem-pole) structure. With MOBILE (monostable-bistable transition logic element) theorem we can built a MOS-NDR inverter by placing a NMOS in parallel with the lower part of the cascode structure. The MOS-NDR inverter cascades two Common-Source amplifier and feedback to MOS-NDR inverte...