نتایج جستجو برای: pull in voltage
تعداد نتایج: 16997999 فیلتر نتایج به سال:
In this brief a new low actuation voltage RF MEMS switch is presented which can be integrated and controlled with available CMOS technologies. Despite the advantages in the design of RF MEMS switches designing a low actuation voltage RF MEMS switch is still a challenging task. To overcome this problem, a small size RF MEMS switch utilizing a moving plate with multiple holes supported by a low s...
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This paper presents a zeroth and first order perturbative analysis of prestressed electrostatic actuated Microelectromechanical systems (MEMS). Perturbation theory is used to calculate the deflection profile various MEMS structures, from which pull-in voltage estimated using weighed residual method, where both Galerkin expression Dirac delta function have been as weight functions. A circular Ca...
Electrostatic-driven microelectromechanical systems devices, in most cases, consist of couplings of such energy domains as electromechanics, optical electricity, thermoelectricity, and electromagnetism. Their nonlinear working state makes their analysis complex and complicated. This article introduces the physical model of pull-in voltage, dynamic characteristic analysis, air damping effect, re...
Relay-Based Circuits In article number 2200584, Dinesh Pamunuwa and co-workers report the first in-plane, single-contact 4-terminal relay a 1-to-2 demultiplexer built from only two relays compared to ten conventional 3-terminal relays. The technique of body biasing reduce pull-in voltage is also demonstrated, which has potential for major power savings as consumption varies quadratically with v...
Static circuit gates are the standard circuit devices used to build the major parts of digital circuits. Dynamic gates, such as domino circuits, are only used in certain sections of the circuit where speed is critical. These gates achieve higher speed compared to static gates at the cost of reduced noise margins. We propose a novel gate structure that tries to improved noise margin when compare...
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