نتایج جستجو برای: pn semiconductor detector

تعداد نتایج: 128614  

Journal: :HNPS Advances in Nuclear Physics 2023

Accurate neutron flux measurements in fusion reactors are essential, order to determine the feasibility and progress of reaction as well for safety issues. Semiconductor detectors exhibit promising characteristics operation extreme environmental conditions reactors. Silicon, Diamond Silicon Carbide most studied anticipated materials constructing with high efficiency irradiation resistance. The ...

Journal: :Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2017

2006
Hua Feng

A double-layer silicon detector consisting of two 500μm-thick silicon PIN photodiodes with independent readouts was mounted in a vacuum chamber and tested with X-ray sources. The detector is sensitive from 1–30 keV with an effective area of 6 mm. The detector performs best at −35 ◦C with an energy resolution of 220 eV (FWHM, full width at half maximum) at 5.9 keV, and is able to operate at room...

Journal: :Microelectronics Reliability 2011
V. V. N. Obreja C. Codreanu D. Poenar Octavian Buiu

Typical blocking I–V characteristics are shown and analyzed for PN junctions exhibiting a breakdown region above 1000 V from commercial diodes and power MOSFETs. The leakage reverse current of PN junctions from commercial silicon devices available at this time has a flowing component at the semiconductor–passivant material interface around the junction edge. Part of the plotted experimental cur...

Journal: :J. Visual Communication and Image Representation 2005
Étienne Vincent Robert Laganière

This paper proposes a new feature point detector which uses a wedge model to characterize corners by their orientation and angular width. This detector is compared to two popular feature point detectors: the Harris and SUSAN detectors, on the basis of some defined quality attributes. It is also shown how feature points between widely separated views can be matched by using the information provi...

Journal: :Infrared Physics & Technology 2022

We explore InAs/InAsSb type-II superlattice long wavelength infrared detector based focal plane arrays for potential NASA land imaging applications. used the complementary barrier (CBIRD) architecture with p-type absorber (p-CBIRD), and a combination of n-type absorbers (pn-CBIRD). CBIRD fabricated using conventional process an alternative silicon-on-silicon have both demonstrated good operabil...

2012
Y.Suravardhana Reddy Kumar Reddy

Direct sequence code division multiple access (DS-CDMA) is a popular wireless technology. This system suffers from Multiple Access Interference (MAI) caused by Direct Sequence users and Near–Far effect due to different power levels received. Multi-User Detection schemes are used to detect the users’ data in the presence of MAI and Near–Far problem. In this paper, presented comparative study bet...

2016
V.Ajay Kumar

Direct sequence code division multiple access (DSCDMA) is a popular wireless technology. This system suffers from Multiple Access Interference (MAI) caused by Direct Sequence users and Near –far effect. Multi-User Detection schemes are used to detect the users’ data in presence of MAI and Nearfar problem. In this dissertation, we present comparative study between linear multiuser detectors and ...

2006
G. Itskos E. Harbord S. K. Clowes E. Clarke L. F. Cohen R. Murray W. Van Roy

We report on studies of electrical spin injection from ferromagnetic Fe contacts into semiconductor light emitting diodes containing single layers of InAs/GaAs self-assembled quantum dots QDs . An oblique magnetic field is used to manipulate the spin of the injected electrons in the semiconductor. This approach allows us to measure the injected steady-state spin polarization in the QDs, Pspin a...

2013
Srikanta Bose S. K. Mazumder

In the present simulation work, an attempt is made to study the switching dynamics of an optically controlled 4HSiC thyristor power semiconductor device with the use of GaAs optically triggered power transistor. The half-cell thyristor has the forward breakdown of 200 V and reverse breakdown of more than 1000 V. The optically controlled thyristor has a rise time of 0.14 μs and fall time of 0.06...

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