Strained layer InGaAs-GaAs single-quantum-well buried heterostructure lasers were fabricated by a hybrid molecular beam epitaxy and liquid phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser ( L = 425 pm) and 0.75 mA for a coated laser ( R 0.9, L = 198 pm), were obtained. A 3 dB modulation bandwidth of 7.6 GHz was demonstrated at low bias current (14 mA).

WE PRESENT THE MOLECULAR BEAM EPITAXY FABRICATION AND OPTICAL PROPERTIES OF COMPLEX GAAS NANOSTRUCTURES BY DROPLET EPITAXY: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is deve...

InGaAsN and GaAsN epitaxial layers with similar nitrogen compositions in a sample were successfully grown on a GaAs (001) substrate by solid source molecular beam epitaxy. An electron cyclotron resonance nitrogen plasma source has been used to generate atomic nitrogen during the growth of the nitride layers. The indium composition changed from sample to sample to give compressive and tensile st...

Self-assembled magnetic nanostructures prepared by molecular beam epitaxyon low energy surfacesNanostructures of MxPt1−x (M=Co and Fe) alloys have perpendicular magnetic aniso-tropy which makes them good candidates as high density magnetic recording media. Inthis thesis work, the structural and magnetic properties of these nanostructures werestudied as a function of the ...

With the molecular beam epitaxy technique, layer-by-layer growth of atomically flat topological insulator Bi(2) Te(3) and Bi(2) Se(3) thin films has been realized on Si(111) and graphene substrates, respectively. The growth criteria by which intrinsic topological insulators can readily be obtained is established. By using in situ angle-resolved photoemission spectroscopy and scanning tunneling ...

Here we employ self-assembled Mg-doped GaN nanowires (NWs) grown by plasma assisted molecular beam epitaxy on Si(111) substrates to fabricate piezogenerators. We first discuss the fabrication and testing of rigid nanowire-based generators and then a flexible generator prototype is shown.