نتایج جستجو برای: mo si b
تعداد نتایج: 993081 فیلتر نتایج به سال:
For a long time, two-dimensional (2D) hexagonal ${\mathrm{MoS}}_{2}$ was proposed as promising material for the valleytronic system. However, limited size of growth and low carrier mobility in restrict its further application. Very recently, new kind 2D MXene, $\mathrm{Mo}{\mathrm{Si}}_{2}{\mathrm{N}}_{4}$, successfully synthesized with large size, excellent ambient stability, considerable hole...
Isothermal oxidation tests were performed on Ti6242S (Ti—6% Al—2% Sn—4% Zr—2% Mo, 0.08% Si), Ti6246 Zr—6% 0.05% TiXT (Ti—0.45% Si) alloys and pure titanium in laboratory air at 560 °C, 600 °C 650 for 1000 h to compare their behaviors. This study aims highlight the role of molybdenum silicon resistance alloys. The results show that 6 wt.% Mo does not substantially change behavior compared alloy ...
This paper describes the development of a simple UV spectroscopic method for determination of silicon content in black liquor. The method is based on the fact that Si (IV) can react with ammonium molybdate to form Si-Mo heterophony acid in an acidic condition (pH=4). The absorption peak of α-Si-Mo heterophony acid is 340 nm. To avoid the compensation of the instrument, 360 nm is used for spectr...
For a long time, two-dimensional (2D) hexagonal ${\mathrm{MoS}}_{2}$ was proposed as promising material for the valleytronic system. However, limited size of growth and low carrier mobility in restrict its further application. Very recently, new kind 2D MXene, $\mathrm{Mo}{\mathrm{Si}}_{2}{\mathrm{N}}_{4}$, successfully synthesized with large size, excellent ambient stability, considerable hole...
Molybdenum has several properties that make it attractive as a CMOS gate electrode material. The high melting point (~2610°C) and low coefficient of thermal expansion (5×10/ oC, at 20 oC) are well suited to withstand the thermal processing budgets normally encountered in a CMOS fabrication process. Mo is among the most conductive refractory metals and provides a significant reduction in gate re...
The interaction of TiOx with SiO2/Mo(112) has been studied using high-resolution electron energy loss spectroscopy, Auger electron spectroscopy, low-energy electron diffraction, and molecular adsorption. Ti at varying coverages was deposited onto a SiO2/Mo(112) surface followed by oxidation at 600K and annealing at various temperatures. TiOx disperses and covers the SiO2 surface after oxidation...
Aperiodic multilayers have been designed for various applications, using numeric algorithms and analytical solutions, for many years with varying levels of success. This work developed a more realistic model for simulating aperiodic Mo/Si multilayers to be used in these algorithms by including the formation of MoSi(2). Using a genetic computer code we were able to optimize a 45 masculine multil...
In the title compound, [Mo(C6H18NSi2)(C3H9OSi)2N], the Mo(VI) cation is located on a mirror plane and is coordinated by a nitride anion, a 1,1,1-trimethyl-N-(tri-methyl-sil-yl)silanaminate anion and two tri-methyl-silanolate anions in a distorted tetra-hedral geometry; the N atom and two Si atoms of the 1,1,1-trimethyl-N-(tri-methyl-sil-yl)silanaminato anionic ligand are also located on the mir...
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