نتایج جستجو برای: mo si b

تعداد نتایج: 993081  

Journal: :Physical review 2021

For a long time, two-dimensional (2D) hexagonal ${\mathrm{MoS}}_{2}$ was proposed as promising material for the valleytronic system. However, limited size of growth and low carrier mobility in restrict its further application. Very recently, new kind 2D MXene, $\mathrm{Mo}{\mathrm{Si}}_{2}{\mathrm{N}}_{4}$, successfully synthesized with large size, excellent ambient stability, considerable hole...

Journal: :Oxidation of Metals 2021

Isothermal oxidation tests were performed on Ti6242S (Ti—6% Al—2% Sn—4% Zr—2% Mo, 0.08% Si), Ti6246 Zr—6% 0.05% TiXT (Ti—0.45% Si) alloys and pure titanium in laboratory air at 560 °C, 600 °C 650 for 1000 h to compare their behaviors. This study aims highlight the role of molybdenum silicon resistance alloys. The results show that 6 wt.% Mo does not substantially change behavior compared alloy ...

2010
Qiang Wang Kefu Chen Jun Li Shanshan Liu Zhaojiang Wang

This paper describes the development of a simple UV spectroscopic method for determination of silicon content in black liquor. The method is based on the fact that Si (IV) can react with ammonium molybdate to form Si-Mo heterophony acid in an acidic condition (pH=4). The absorption peak of α-Si-Mo heterophony acid is 340 nm. To avoid the compensation of the instrument, 360 nm is used for spectr...

Journal: :Tohoku Mathematical Journal 1979

Journal: :Physical review 2021

For a long time, two-dimensional (2D) hexagonal ${\mathrm{MoS}}_{2}$ was proposed as promising material for the valleytronic system. However, limited size of growth and low carrier mobility in restrict its further application. Very recently, new kind 2D MXene, $\mathrm{Mo}{\mathrm{Si}}_{2}{\mathrm{N}}_{4}$, successfully synthesized with large size, excellent ambient stability, considerable hole...

2000
Pushkar Ranade Yee-Chia Yeo Qiang Lu Hideki Takeuchi Tsu-Jae King Chenming Hu

Molybdenum has several properties that make it attractive as a CMOS gate electrode material. The high melting point (~2610°C) and low coefficient of thermal expansion (5×10/ oC, at 20 oC) are well suited to withstand the thermal processing budgets normally encountered in a CMOS fabrication process. Mo is among the most conductive refractory metals and provides a significant reduction in gate re...

2005
M. S. Chen D. W. Goodman

The interaction of TiOx with SiO2/Mo(112) has been studied using high-resolution electron energy loss spectroscopy, Auger electron spectroscopy, low-energy electron diffraction, and molecular adsorption. Ti at varying coverages was deposited onto a SiO2/Mo(112) surface followed by oxidation at 600K and annealing at various temperatures. TiOx disperses and covers the SiO2 surface after oxidation...

Journal: :Optics express 2006
A L Aquila F Salmassi F Dollar Y Liu E Gullikson

Aperiodic multilayers have been designed for various applications, using numeric algorithms and analytical solutions, for many years with varying levels of success. This work developed a more realistic model for simulating aperiodic Mo/Si multilayers to be used in these algorithms by including the formation of MoSi(2). Using a genetic computer code we were able to optimize a 45 masculine multil...

2015
Caiwei Geng Xiang Hao Peng Jiao

In the title compound, [Mo(C6H18NSi2)(C3H9OSi)2N], the Mo(VI) cation is located on a mirror plane and is coordinated by a nitride anion, a 1,1,1-trimethyl-N-(tri-methyl-sil-yl)silanaminate anion and two tri-methyl-silanolate anions in a distorted tetra-hedral geometry; the N atom and two Si atoms of the 1,1,1-trimethyl-N-(tri-methyl-sil-yl)silanaminato anionic ligand are also located on the mir...

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