Junctionless transistors (JLTs) have promising strengths such as extremely simple structures without p-n junctions, better reliability, and low flicker noise, for overcoming scaling challenges advanced sub-5-nm nodes. In this article, channel-width-dependent operation in the partially depleted regime of tri-gate JLTs was investigated comparison to conduction conventional inversion-mode (IM) tra...

Two-dimensional transitional metal dichalcogenide (TMDC) field-effect transistors (FETs) are proposed to be promising for devices scaling beyond silicon-based devices. We explore the different effective mass and bandgap of the channel materials and figure out the possible candidates for high-performance devices with the gate length at 5 nm and below by solving the quantum transport equation sel...

This present article interprets the analytical models of central channel potential, threshold voltage, and subthreshold current for Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs. The parabolic approximation equation with appropriate boundary conditions has been adopted to solve 2D Poisson’s determining potential. minimum potential is obtained by expression, it utilized determine...

Based on the parabolic potential approach (PPA), scaling theory, and driftdiffusion approach (DDA) with effective band gap widening (BGW), we propose an analytical subthreshold current/swing model for junctionless (JL) cylindrical nanowire FETs (JLCNFETs). The work indicates that the electron density of Qm that is induced by the current factor minimum central potentialc,minand equivalen...

Using an ultrathin (∼ 15 nm in thickness) molybdenum oxide (MoOx, x < 3) layer as a transparent hole selective contact to n-type silicon, we demonstrate a room-temperature processed oxide/silicon solar cell with a power conversion efficiency of 14.3%. While MoOx is commonly considered to be a semiconductor with a band gap of 3.3 eV, from X-ray photoelectron spectroscopy we show that MoOx may be...