نتایج جستجو برای: inp

تعداد نتایج: 4104  

1997
M. Gendry

Detailed analysis of the 1/f low-frequency noise (LFN) in In0:52Al0:48As/InGaAs MODFET structures is performed, for low drain bias (below pinch-off voltage), in order to identify the physical origin and the location of the noise sources responsible for drain current fluctuations in the frequency range 0.1 Hz–105 Hz. Experimental data were analyzed with the support of a general modeling of the 1...

2004
Benjamin F. Chu-Kung Shyh-Chiang Shen Walid Hafez Milton Feng

Type II InP/GaAsSb transistors have attracted much interest in high speed microelectronics. However, Kirk-effectinduced current blocking was observed, limiting the highest achievable current density and hence the speed. In this work, we present an explanation as to the cause of current blocking in InP/GaAsSb DHBTs. The effects of collector thickness are investigated and methods to achieve highe...

2001
Bulent Cakmak Richard V. Penty

This paper presents the fabrication and characterisation of wet and reactive ion etched ridge waveguide InGaAs/InGaAsP/InP lasers with an operating wavelength of 1.5μm. Characterisation results of InGaAs/InGaAsP/InP lasers are given of two etching methods, namely wet chemical etching and reactive ion etching. Relative advantages and disadvantages of these two methods are also discussed comparat...

Journal: :CoRR 2012
Joël Chevrier Laya Madani Simon Ledenmat Ahmad Bsiesy

THE PHYSICS TEACHER ! Vol. 51, 2013 Teaching classical mechanics using smartphones Joel Chevrier, Université Joseph Fourier BP 53 38041 Grenoble Cedex 9 Laya Madani, Simon Ledenmat, and Ahmad Bsiesy, CIME Nanotech, Grenoble INP/UJF, BP 257, 38016 Grenoble Cedex 1 Jochen Kuhn and Patrik Vogt, Column Editors, Department of Physics/Didactics of Physics, University of Kaiserslautern, Erwin-Schrödin...

Journal: :Dalton transactions 2010
Junli Wang Qing Yang Zude Zhang Tanwei Li Shuyuan Zhang

The synthesis of InP nanofibers via a new Ullmann-type reaction of indium nanoparticles with tri(m-tolyl)phosphine (P(PhMe)(3)) was typically performed to illustrate an alternative route for the preparation of nanostructured metal phosphides, including III-V (13-15) and transition-metal phosphides. Triarlyphosphine compounds such as other two tri(m-tolyl)phosphine isomers, diphenyl(p-tolyl)phos...

Journal: :Nano letters 2014
Yuda Wang Howard E Jackson Leigh M Smith Tim Burgess Suriati Paiman Qiang Gao Hark Hoe Tan Chennupati Jagadish

Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measu...

2012
Siqi Sun Xinran Dong Yao Fu Weidong Tian

A key step in network analysis is to partition a complex network into dense modules. Currently, modularity is one of the most popular benefit functions used to partition network modules. However, recent studies suggested that it has an inherent limitation in detecting dense network modules. In this study, we observed that despite the limitation, modularity has the advantage of preserving the pr...

2005
Yun Sun Zhi Liu Francisco Machuca Piero Pianetta William E. Spicer

A very effective, two-step chemical etching method to produce clean InP(100) surfaces when combined with thermal annealing has been developed. The hydrogen peroxide/sulfuric acid based solutions, which are successfully used to clean GaAs(100) surfaces, leave a significant amount of residual oxide on the InP surface which can not be removed by thermal annealing. Therefore, a second chemical etch...

Journal: :Nano letters 2014
Kun Li Hao Sun Fan Ren Kar Wei Ng Thai-Truong D Tran Roger Chen Connie J Chang-Hasnain

Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and In...

Journal: :Nanotechnology 2017
Kun Peng Patrick Parkinson Qian Gao Jessica L Boland Ziyuan Li Fan Wang Sudha Mokkapati Lan Fu Michael B Johnston Hark Hoe Tan Chennupati Jagadish

Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to...

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