Detailed analysis of the 1/f low-frequency noise (LFN) in In0:52Al0:48As/InGaAs MODFET structures is performed, for low drain bias (below pinch-off voltage), in order to identify the physical origin and the location of the noise sources responsible for drain current fluctuations in the frequency range 0.1 Hz–105 Hz. Experimental data were analyzed with the support of a general modeling of the 1...

Type II InP/GaAsSb transistors have attracted much interest in high speed microelectronics. However, Kirk-effectinduced current blocking was observed, limiting the highest achievable current density and hence the speed. In this work, we present an explanation as to the cause of current blocking in InP/GaAsSb DHBTs. The effects of collector thickness are investigated and methods to achieve highe...

This paper presents the fabrication and characterisation of wet and reactive ion etched ridge waveguide InGaAs/InGaAsP/InP lasers with an operating wavelength of 1.5μm. Characterisation results of InGaAs/InGaAsP/InP lasers are given of two etching methods, namely wet chemical etching and reactive ion etching. Relative advantages and disadvantages of these two methods are also discussed comparat...

THE PHYSICS TEACHER ! Vol. 51, 2013 Teaching classical mechanics using smartphones Joel Chevrier, Université Joseph Fourier BP 53 38041 Grenoble Cedex 9 Laya Madani, Simon Ledenmat, and Ahmad Bsiesy, CIME Nanotech, Grenoble INP/UJF, BP 257, 38016 Grenoble Cedex 1 Jochen Kuhn and Patrik Vogt, Column Editors, Department of Physics/Didactics of Physics, University of Kaiserslautern, Erwin-Schrödin...

The synthesis of InP nanofibers via a new Ullmann-type reaction of indium nanoparticles with tri(m-tolyl)phosphine (P(PhMe)(3)) was typically performed to illustrate an alternative route for the preparation of nanostructured metal phosphides, including III-V (13-15) and transition-metal phosphides. Triarlyphosphine compounds such as other two tri(m-tolyl)phosphine isomers, diphenyl(p-tolyl)phos...

Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measu...

A key step in network analysis is to partition a complex network into dense modules. Currently, modularity is one of the most popular benefit functions used to partition network modules. However, recent studies suggested that it has an inherent limitation in detecting dense network modules. In this study, we observed that despite the limitation, modularity has the advantage of preserving the pr...

A very effective, two-step chemical etching method to produce clean InP(100) surfaces when combined with thermal annealing has been developed. The hydrogen peroxide/sulfuric acid based solutions, which are successfully used to clean GaAs(100) surfaces, leave a significant amount of residual oxide on the InP surface which can not be removed by thermal annealing. Therefore, a second chemical etch...

Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and In...

Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to...