We demonstrate ultrafast polarization-independent switching, using an asymmetric Fabry-Pérot device, based on bulk InGaAsP, which can operate at high repetition rates. Our preliminary device exhibited 5.5ps switching time, 12dB contrast, and 0.5pJ/μm switching energy density. © 1999 Optical Society of America OCIS codes: (230.1150) All-optical devices; (190.7110) Ultrafast nonlinear optics; (23...

Operation of semiconductor scintillators requires optically tight integration of the photoreceiver system on the surface of the scintillator slab. We have implemented an efficient and fast quaternary InGaAsP pin photodiode, epitaxially grown on the surface of an InP scintillator wafer and sensitive to InP luminescence. The diode is characterized by an extremely low room-temperature dark current...

Selectivephotodissociation of TlCl and TU using248nm ra-INTRODUCTIONd i a t i o n f r o m a ~ F * e x c ~ e r l a s e ~ h a s b e e n u ~ d t o ~ e a t e a T 1 * ( 6 ~‘P;/Z) N this letter we report studies of the T1 anti-stokes R m a nemission at 376 nm has been observed using a532 nm pump laser. OutIlaser in which new methods for creating themetastable state pop...

High Quality III-V Semiconductors/Si Heterostructures for Photonic Integration and Photovoltaic Applications Himanshu Kataria TRITA-ICT/MAP AVH Report 2014:13; ISSN 1653-7610; ISRN KTH/ICT-MAP/AVH-2014:13-SE ISBN 978-91-7595-289-5 Abstract This thesis deals with one of the promising strategies to monolithically integrate III-V semiconductors with silicon via epitaxial lateral overgrowth (ELOG) ...

Near-field scanning optical microscopy was used to observe high-resolution images of confined modes and photonic bands of planar photonic crystal ~PPC! nanocavities fabricated in active InGaAsP material. We have observed the smallest optical cavity modes, which are intentionally produced by fractional edge dislocation high-Q cavity designs. The size of the detected mode was roughly four by thre...

We investigate quantum efficiency limitations in InGaAsP/InP multiquantum-well ~MQW! laser diodes emitting at 1.5 mm. At room temperature, the internal differential efficiency above threshold is found to be reduced mainly by increasing Auger recombination and spontaneous emission within the quantum wells. These carrier loss increments are commonly assumed negligible due to MQW carrier density c...

Radiation damage in 1310nm InGaAsP/InP multi-quantum-well lasers caused by 0.8MeV neutrons is compared with the damage from other radiation sources, in terms of the increase in laser threshold current. The annealing behavior is then presented both in terms of both temperature and forward-bias current dependence. The annealing can be described by a model where radiation induced defects have a un...