We present a fully integrated InGaAs/InP negative feedback avalanche diode (NFAD) based free-running single-photon detector (SPD) designed for accurate lidar applications. A free-piston Stirling cooler is used to cool down the NFAD with a large temperature range, and an active hold-off circuit implemented in a field programmable gate array is applied to further suppress the afterpulsing contrib...

Recently, microwave performance has been reported for PNP InAlAs/InGaAs HBTs [1]. Although some simulations have been performed for the optimization of GaAs-based PNP HBTs [2], little has been reported on the optimization of PNP HBTs in the InP material system. In this work, various layer structures for InAlAs/InGaAs PNP HBTs were simulated using a 2dimensional drift-diffusion simulator in orde...

Pigmented tissues are inaccessible to Raman spectroscopy using visible laser light because of the high level of laser-induced tissue fluorescence. The fluorescence contribution to the acquired Raman signal can be reduced by using an excitationwavelength in the near infrared range around 1000nm. This will shift the Raman spectrum above 1100nm, which is the principal upper detection limit for sil...

We present the first investigation of Shubnikov–de Haas (SdH) oscillations of two-dimensional electron gas formed in an InAsN/InGaAs single quantum well (QW) grown on an InP substrate using gas source molecular beam epitaxy and a radio-frequency (rf) plasma nitrogen source. The photoluminescence (PL) peak energy of the InAsN/InGaAs QW decreases compared with that of InAs/InGaAs QW. This agrees ...

Articles you may be interested in Picosecond laser dynamics of gaincoupled and indexcoupled InGaAs/InGaAlAs quantum well distributed feedback lasers Appl. Ultralow chirping short optical pulse (16 ps) generation in gaincoupled distributed feedback semiconductor lasers Appl.

First reliability investigations with HBV are presented using pulsed electrical stress. AlGaAs/GaAs material systems as well as InGaAs/InAlAs have been investigated and compared regarding degradation characteristics and mechanisms. Diffusion is proposed to be the responsible degradation mechanism.

Optical and photoelectric properties of metamorphic InAs/InGaAs and conventional pseudomorphic InAs/GaAs quantum dot (QD) structures were studied. We used two different electrical contact configurations that allowed us to have the current flow (i) only through QDs and embedding layers and (ii) through all the structure, including the GaAs substrate (wafer). Different optical transitions between...

Recently, encouraging progress has been made on surface-channel inversion-mode In-rich InGaAs NMOSFETs with superior drive current, high transconductance and minuscule gate leakage, using atomic layer deposited (ALD) high-k dielectrics. Although gate-last process is favorable for high-k/III–V integration, high-speed logic devices require a self-aligned gate-first process for reducing the parasi...

Optically active, highly uniform, cylindrical InGaAs quantum dot QD arrays have been fabricated using nanosphere lithography combined with Bromine ion-beam-assisted etching and molecular beam epitaxy MBE -assisted GaAs mass transport. Previously fabricated QD nanopillar arrays showed significant degradation of optical properties due to the etch damage. Here, a novel mass transport process in a ...

InAlAsLlnGaAs MODFETs have achieved record high-frequency and low-noise performance. They are promising candidates for applications in microwave and lightwave communication systems. Their main weakness, however, has been their low breakdown voltage (BV) which severely limits their applications. Considerable work has focussed on improving BV of these devices. Recently, BV up to 10 V has been dem...