A q-plate is a stratified medium composed of a uniaxial nematic liquid crystal with an inhomogeneous orientation of the optical axis possessing a topological charge q, which looks promising as a switching device. This work reports an approach to diagonalizing the dielectric tensor in q-plates, giving a detailed study of nontrivial tensor coordinate transformations. The relationship between the ...

Influence of dielectric materials as gate oxide on various short channel device parameters using a 2-D device simulator has been studied in this paper. It is found that the use of high-k dielectrics directly on the silicon wafer would degrade the performance. This degradation is mainly due to the fringing field effect developed from gate to source/drain. This fringing field will further generat...

The present work focuses on nanowire (NW) applications as semiconducting elements in solution processable field-effect transistors (FETs) targeting large-area low-cost electronics. We address one of the main challenges related to NW deposition and alignment by using dielectrophoresis (DEP) to select multiple ZnO nanowires with the correct length, and to attract, orientate and position them in p...

The organic material soluble polyimide (PI) and organic-inorganic hybrid PI-barium titanate (BaTiO3) nanoparticle dielectric materials (IBX, where X is the concentration of BaTiO3 nanoparticles in a PI matrix) were successfully synthesized through a sol-gel process. The effects of various BaTiO3 contents on the hybrid film performance and performance optimization were investigated. Furthermore,...

The characteristics of a typical 70nm high K gate dielectrics MOSFET with different source/drain structure including S/D lift-up structure are simulated by two dimensional device simulator. The impact of FIBL effect the gate dielectric permikttivity increasing to the characteristics of MOSFET is investigated. The simulation results shows that the degradation of MOSFET characteristics can be sup...

This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO₂) as a gate dielectric. Sulfur pretreatment and postoxidation rapid thermal annealing (RTA) were consecutively employed before and after the gate dielectric was deposited to fi...

When pushing the gate dielectric thickness of metal-oxide-semiconductor (MOS) devices down to the subnanometer scale, the most challenging issue is the interface. The interfacial transition layers between the high-k dielectric/Si and between the high-k dielectric/gate metal become the critical constraints for the smallest achievable film thickness. This work presents a detailed study on the int...

BACKGROUND Chondrocytes respond to biomechanical and bioelectrochemical stimuli by secreting appropriate extracellular matrix proteins that enable the tissue to withstand the large forces it experiences. Although biomechanical aspects of cartilage are well described, little is known of the bioelectrochemical responses. The focus of this study is to identify bioelectrical characteristics of huma...

The study of scanning tunneling microscopy (STM) induced localized dielectric degradation and polarity dependent breakdown (BD) in HfO2/SiOx dielectric stacks is presented in this work, together with a correlated investigation of the BD locations by transmission electron microscopy (TEM). The localized dielectric BD events are also analysed using conductive-atomic force microscopy (C-AFM). The ...

Experimental work is planned to study the performance of a beam-driven cylindrical dielectric wakefield accelerating structure as a source of THz coherent Cerenkov radiation (CCR). For an appropriate choice of dielectric tube geometry and driving electron bunch parameters, the device operates in a single-mode regime, producing radiation in the THz range. This source can potentially produce high...