The growth and surface passivation of near-surface InGaAs quantum wells (QWs) on GaAs (1 1 0) substrate have been investigated. Triangular shaped small islands, approximate areal density of 10 cm , are observed on metal organic vapor phase epitaxially grown GaAs single layer and InGaAs multi-quantum wells (MQWs) surfaces in a wide range of growth temperatures. By optimizing the growth condition...

Fast pyrolysis is a promising method for producing advanced biofuels and chemicals from lignocellulosic biomass. The process will however require further optimization to produce fuels and chemicals at a price competitive to conventional fossil fuel-derived products. Research in this dissertation focuses on both preand postprocesses for optimizing fast pyrolysis to produce increased yields of va...

A novel stack passivation scheme, in which plasma silicon nitride (SiN) is stacked on top of a rapid thennal SiO? (RTO) layer, is developed to attain a surface recombination velocity (S) approaching 10 em/s at the L3 O-cm p-typc (l00) silicon surfaee_ Such low S is achieved by the stack cven when the RTO and SiN films "I<ilvldllally yield considerably poorer surface passivation. Critical to ach...

In this report, we apply an input-output transformation passivation method, described in our previous works, to an Adaptive Cruise Control system. We analyze the system’s performance under a co-simulation framework that makes use of an online optimization method called extremum-seeking to achieve the optimized behavior. The matrix for passivation method encompasses commonly used methods of seri...

the aisi 316 l stainless steel (ss) specimens were exposed to passivation surface through two different processes including; holding in 40-vol% hno3 at temperature of 60 ºc for 30 min and 15-vol%h2so4 at ambient temperature for 1 hour. the corrosion behavior of specimens was evaluated in physiological solutions by electrochemical in vitro tests through linear and tafel polarization tests. cycli...

The principal role of chemical passivation GaAs surface in the formation on it oriented anisotropic nanoclusters gold is discussed. are fabricated by thermal annealing a film deposited onto GaAs(001) passivated as preliminary monolayer nitrogen or sulfur atoms. These atoms, bonded chemically to gallium atoms crystal surface, form lattice and prevent interaction Au with GaAs. As result annealing...

This work reports the feasibility of applying emulsion pertraction technology (EPT) aiming at zinc recovery and waste minimization in the zinc electroplating processes that include Cr (III) passivation. The assessment consists of firstly the lifetime extension of the passivation baths by selective removal of the tramp ions zinc and iron, and secondly, the recovery of zinc for further reuse. Spe...

The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx depos...

This paper reports a novel single-step wafer-level fabrication of superhydrophobic micro/nano dual-scale (MNDS) poly(dimethylsiloxane) (PDMS) films. The MNDS PDMS films were replicated directly from an ultralow-surface-energy silicon substrate at high temperature without any surfactant coating, achieving high precision. An improved deep reactive ion etching (DRIE) process with enhanced passivat...

The nanostructuring of silicon surfaces--known as black silicon--is a promising approach to eliminate front-surface reflection in photovoltaic devices without the need for a conventional antireflection coating. This might lead to both an increase in efficiency and a reduction in the manufacturing costs of solar cells. However, all previous attempts to integrate black silicon into solar cells ha...