The dynamics of excited electronic states at Ag surfaces is studied by evaluating the quasiparticle selfenergy within the GW approximation. The screened Coulomb interaction W is shown to be sensitive to the spatial variation of s-d screening near the surface. In the region of s-electron spill-out electronic damping is stronger than in the bulk due to the reduced s-d polarization, giving rise to...

wileyonlinelibrary.com detectivity of extrinsic photoconductive detectors depends on the ratio of optical carrier generation to thermal carrier generation. Traditionally, extrinsic silicon photodetectors have been limited by either high thermal impurity ionization or low optical carrier generation due to low absorption of sub-band gap radiation. Commonly used group III or V dopants (B, Al, Ga, ...

τ e , τ h electron & hole minority carrier lifetimes respectively L e , L h electron & hole minority carrier diffusion lengths respectively µ e , µ h electron & hole mobilities respectively (cm 2 /V-sec) D e , D h electron & hole diffusivities respectively (cm 2 /sec) n e , n h the electron & hole concentrations respectively n e0 , n h0 electron & hole concentrations in thermal equilibrium n i ...

We investigated the magnetotransport properties of Bi2Te3 films grown on GaAs (001) substrate by a cost-effective metallo-organic chemical vapor deposition (MOCVD). We observed the remarkably high carrier mobility and the giant linear magnetoresistance (carrier mobility ∼ 22 000 cm(2) V(-1) s(-1), magnetoresistance ∼ 750% at 1.8 K and 9 T for a 100 nm thick film) that depends on the film thickn...

ZnxCd1-xSe/C core/shell nanocrystals with 31-39 nm diameter semiconductor cores and 11-25 nm-thick carbon shells were synthesized from solid state precursors in large scale amounts. Transmission electron microscopy (TEM) showed striations in the nanocrystals that are indicative of a composition modulation, and reveal a chemical phase separation and possible spinodal decomposition within the nan...

A quantum dot spin light emitting diode provides a test of carrier spin injection into a qubit and a means for analyzing carrier spin injection and local spin polarization. Even with 100% spin-polarized carriers the emitted light may be only partially circularly polarized due to the geometry of the dot. We have calculated carrier polarization-dependent optical matrix elements for InAs/GaAs self...

Capturing the dynamic electronic band structure of a correlated material presents a powerful capability for uncovering the complex couplings between the electronic and structural degrees of freedom. When combined with ultrafast laser excitation, new phases of matter can result, since far-from-equilibrium excited states are instantaneously populated. Here, we elucidate a general relation between...

Charge transport in organic photovoltaic (OPV) devices is often characterized by space-charge limited currents (SCLC). However, this technique only probes the transport of charges residing at quasi-equilibrium energies in the disorder-broadened density of states (DOS). In contrast, in an operating OPV device the photo-generated carriers are typically created at higher energies in the DOS, follo...

It is shown that current saturation in semiconducting carbon nanotubes is indistinguishable from metallic nanotubes if the carrier density is above a critical value determined by the bandgap and the optical phonon energy. This feature stems from the higher number of current-carrying states in the semiconducting tubes due to the van Hove singularity at the band edge. Above this critical carrier ...

In this work, we demonstrate abrupt, reversible switching of resistance in 1T-TaS2 using dc and pulsed sources, corresponding to an insulator-metal transition between the insulating Mott and equilibrium metallic states. This transition occurs at a constant critical resistivity of 7 mohm-cm regardless of temperature or bias conditions and the transition time is significantly smaller than abrupt ...