Strained Siand SiGe-based heterostructure MOSFETs grown on relaxed SiGe virtual substrates exhibit dramatic electron and hole mobility enhancements over bulk Si, making them promising candidates for next generation CMOS devices. The most heavily investigated heterostructures consist of a single strained Si layer grown upon a relaxed SiGe substrate. While this configuration offers significant pe...

Direct wafer bonding is a method for fabricating advanced substrates for microelectromechanical systems (MEMS) and integrated circuits (IC). The most typical example of such an advanced substrate is the silicon-on-insulator (SOI) wafer. SOI wafers offer many advantages over conventional silicon wafers. In IC technology, the switching speed of circuits fabricated on SOI is increased by 20-50% co...

This paper presents an investigation into the degree and nature of chemicalweathering during soil formation on a volcanic (phonolite) substrate on the southern slopes of Mt. Kilimanjaro in northern Tanzania. The high field strength elements Nb and Ta were used to estimate enrichments and depletions relative to the bedrock. The degree ofweatheringwas found to increasewith depth in the soil profi...

The article analyzes the degree of study genetic features Holocene soils beligerative complexes. A detailed description natural and anthropogenic conditions factors determining geography, genesis ecological condition modern buried structures Kamianets-Podilskyi Fortress is given. Considerable attention paid to problem ontogenesis dominant within area, represented by urborendzins constructional ...

The reservoir in different parts of buried-hill draping zone is often quite different, so it great significance to clarify the characteristics for exploration and development. Based on core, well logging, seismic data production data, oil layer Ⅱ lower second member Dongying Formation L oilfield, Bohai Bay Basin, offshore eastern China are systematically studied. Analyses facies, well-seismic c...