We report the synthesis of nanostructured tungsten trioxide (WO3) films and their electrochromic characteristics. Plate-like monoclinic WO3 nanostructures were grown directly on fluorine-doped tin oxide glass substrates by a simple and low-cost crystal-seed-assisted hydrothermal method. The growth mechanism of the film is investigated. HRTEM analysis reveals the single crystalline quality of th...

The molecular structures and reactivity of tantalum oxide-supported metal oxide (V2O5, Nb2O5, CrO3, MoO3, WO3, and Re2O7) catalysts were determined by Raman spectroscopy and the methanol oxidation chemical probe reaction, respectively. The metal oxides form a twodimensional surface metal oxide overlayer on the tantalum oxide support. Under ambient conditions, the hydrated surface metal oxide sp...

Abstract The pulse length dependence of a reactive high power impulse magnetron sputtering (HiPIMS) discharge with tungsten cathode in an argon+oxygen gas mixture was investigated. HiPIMS is operated variable 20–500 µ s. Discharge current measurements, optical emission spectroscopy neutral Ar, O, and W lines, energy-resolved ion mass spectrometry are employed. A pronounced the on noted while in...

High selectivity, enhanced sensitivity, short response time and long shelf-life are some of the key features sought in the solid-state ceramic-based chemical sensors. Since the sensing mechanism and catalytic activity are predominantly surface-dominated, benign surface features in terms of higher aspect ratio, large surface area and, open and connected porosity, are required to realize a succes...

The catalytic activity of oxide-supported vanadium oxide is improved by the presence of tungsten oxide for the selective catalytic reduction of nitric oxides. We propose a mechanism for V−W synergy through studies of the reduction−oxidation behavior of near-monolayer VOX and WOX species grown by atomic layer deposition on the α-Al2O3 (0001) single crystal surface. In situ X-ray standing wave me...

When pushing the gate dielectric thickness of metal-oxide-semiconductor (MOS) devices down to the subnanometer scale, the most challenging issue is the interface. The interfacial transition layers between the high-k dielectric/Si and between the high-k dielectric/gate metal become the critical constraints for the smallest achievable film thickness. This work presents a detailed study on the int...

Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO(2)), tungsten oxide (WO(3)) and indium oxide (In(2)O(3)) were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD). The morphology studied with scanning electron microscopy (SEM) and atomic force microscopy (AFM) shows porous homogeneous films comprising uniformly distribut...

Tungsten being a transition element, forms oxide compounds of various oxidation states that enables it to form nanocolloids tungsten dihydrate. Multiple methods have been used in recent years synthesize nano dihydrate, including sol-gel synthesis, electrochemical deposition, hydrothermal synthesis and anodization. However, universally accepted method for this material is not offered. The most a...