نتایج جستجو برای: transistor characteristic
تعداد نتایج: 193247 فیلتر نتایج به سال:
In VLSI, scaling methods plays an important role in reducing the power dissipation from one technology node to other technology node. The two major constraints for delay in any VLSI circuits are latency and throughput. The negative bias temperature instability (NBTI) effect occurs when a pMOS transistor is under negative bias (Vgs= -VDD) increasing the threshold voltage of pMOS transistor and r...
This paper compares two different logic styles based on 45 nm technology for implementing logic gates of upto two inputs in terms of their layout area, delay and power dissipation. The XOR gate has been implemented & designed using CMOS & Pass Transistor logic on 45 nm technology .The schematic of proposed gate has been designed & simulated by using DSCH3& its equivalent layout has been develop...
A soft switching three-transistor push-pull(TTPP)converter is proposed in this paper. The 3rd transistor is inserted in the primary side of a traditional push-pull converter. Two primitive transistors can achieve zero-voltage-switching (ZVS) easily under a wide load range, the 3rd transistor can also realize zero-voltage-switching assisted by leakage inductance. The rated voltage of the 3rd tra...
Field emission displays (FEDs) show great promise as high performance flat panel displays. The light emission process is efficient, long lifetimes are possible with high brightness, and bright passive matrix displays can be built. Because passive matrix displays don’t need a transistor backplane, it was once thought that these displays would be cheaper to fabricate than their competitors. It is...
The design for an inductive superconducting quantum interference proximity transistor with enhanced performance, the L-SQUIPT, is presented and analyzed. interferometer based on a double-loop structure, where each ring comprises superconductor-normal metal-superconductor mesoscopic Josephson weak-link read-out electrode implemented in form of tunnel probe. Our allows both to improve coupling ex...
Abstract Typical DC-bus stabilization for low-voltage power circuits consists primarily of ceramic capacitors due to the capacity density and low equivalent series resistance (ESR) resulting in conduction losses. Particularly hard-switching hard-commutation operation, ESR high inductance (ESL) commutation path restrict damping switch node voltage overshoot introduce high-frequency ringing, redu...
Progress in semiconductor process technology has made SO1 transistors ons of the most promising candidates for high pertormance and low power designs. With smaller diffusion capacitances, SO1 transistors switch significantly faster than their traditional hulk MOS counterparts and consume less power per switching. However, design and simulation of SO1 MOS circuits is more challenging due to more...
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