INTRODUCTION Semiconductor devices require silicon (Si) wafers as the substrates to be manufactured with very high flatness for miniaturizing the design rule. On the other hand, the size of wafer is increasing for raising the number of device chips per a wafer for reduction of the process cost. Recently, 300 mm diameter wafers are mainly manufactured, and the feasibility study for 450 mm diamet...

A plasma spectrometer design based on advances in lithography and microchip stacking technologies is described. A series of curved plate energy analyzers, with an integrated collimator, is etched into a silicon wafer. Tests of spectrometer elements, the energy analyzer and collimator, were performed with a 5 keV electron beam. The measured collimator transmission and energy selectivity were in ...

Session F. Silicon Carbide: Processing Session L. Nitrides: Transport and Devices Session R. Epitaxy: Metamorphic/Strain Session Y. Epitaxy: Arsenide Nitrides Session D. Antimonide-Based Materials and Devices I Session J. Antimonide-Based Materials and Devices II Session P. Quantum Wells and Superlattices Session E. Materials Integration: Wafer Bonding and Alternative Substrates I Session K. Ma...

A new instrument is described for in-line monitoring of various process steps in silicon solar-cell fabrication. This system can rapidly measure a host of parameters that describe the front-surface and the back-surface properties of a wafer/cell. The measured parameters represent values averaged over the entire wafer/cell, making it suitable for monitoring process steps in a solar cell manufact...

Figure 1. TXRF spectrum of a clean Si wafer surface showing 6.4x10 atoms/cm Fe and 2.6x10 atoms/cm Cu. The Cl is a residue from the HCl solution used to clean the wafer surface and the Ag is a artifact from the particular collimator used in these studies. Other features seen in the spectrum are the Si substrate peak, the scatter peak at 11.2 keV and the escape peak at 9.4 keV. Looking at Trace ...

To study the influence of localized porous silicon regions on radiofrequency performances of passive devices, inductors were integrated on localized porous silicon regions, full porous silicon sheet, bulk silicon and glass substrates. In this work, a novel strong, resistant fluoropolymer mask is introduced to localize the porous silicon on the silicon wafer. Then, the quality factors and resona...

The emerging fields of silicon (Si) photonic micro–electromechanical systems (MEMS) and optomechanics enable a wide range novel high-performance devices with ultra-low power consumption, such as integrated optical MEMS phase shifters, tunable couplers, switches, optomechanical resonators. In contrast to conventional <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="m...