Abstract Decoupling transmission line (TL) is a low characteristic impedance TL that is used for isolating DC and RF signals in millimeter-wave CMOS circuits. Low characteristic impedance makes the direct measurements difficult for characterization. A shunt characterization method is presented for the characterization. In this method, the S-parameters are calculated directly. Nevertheless, the ...

A low-power 435-MHz single-ended low-noise amplifier was implemented in a 0.35-μm silicon on insulator (SOI) CMOS technology. The SOI CMOS LNA has a simulated noise figure of 0.6 dB, input 1-dB compression point of –12.5 dBm, input thirdorder intercept point of –5 dBm, and small-signal gain of 22 dB. Total power dissipation is 10 mW from a 2.5-V supply. LNA chip area is 1.4 mm x 0.58 mm. Due to...

In this paper, we have investigated the design parameters of RF CMOS cells which will be used for switch in the wireless telecommunication systems. This RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. The results for the development of a cell-library which includes the basics of the circuit elements required for the radio ...

ii Declaration I hereby certify that this material, which I now submit for assessment on the programme of study leading to the award of Doctor of Philosophy is entirely my own work, that I have exercised reasonable care to ensure that the work is original, and does not to the best of my knowledge breach any law of copyright, and has not been taken from the work of others save and to the extent ...

The design of an integrated CMOS Power Amplifier (PA) for a Jet Propulsion Laboratory (JPL) Synthetic Aperture Radar (SAR) mission is studied. Although there are a number of PA class definitions and published circuits, designing a high efficiency RF PA is still a challenging job. In this thesis, the goal is full integration in Silicon-on-Sapphire (SOS) using on-chip spiral inductors/transformer...

Abstract This paper presents accurate small-signal modeling of RF CMOS, valid from DC to GHz ranges, using device simulation and analytical modeling. Distributed NQS effects in terms of circuit parameters are discussed and an estimation of the limit up to which quasi-static MOSFET models are reasonable is presented. The impact of the substrate network through gmb multiplication on terminal ac c...