We have combined fast heating with plasma enhanced chemical vapor deposition (PECVD) for preferential growth of semiconducting vertically aligned single-walled carbon nanotubes (VA-SWNTs). Raman spectroscopic estimation indicated a high yield of up to 96% semiconducting SWNTs in the VA-SWNT array. The as-synthesized semiconducting SWNTs can be used directly for fabricating FET devices without t...

background: this study is the first research investigating the possible effect of pulsed power signals on the characteristics of cortical bone by comparing the mechanical properties of this type of bone pre and post expose to pulsed power. methods: a positive buck-boost converter was applied to generate adjustable high voltage, high frequency pulses (up to 500 v and 10 khz). the functional beha...

This paper addresses a relatively simple method of measuring Young’s modulus and residual stress in microelectromechanical systems (MEMS) type structures. A surface profilometer is used to measure the deflection of thin film fixed-fixed beams due to the force applied by the profilometer probe. These measurements are analyzed using analytical beam theory. The treatment of end effects and the acc...

Roll-to-roll (RTR) process requires a linear surface treatment source in various processes such as pre-treatment, etching, and deposition. For high speed and large width processes the linear source should have superior characteristics that can be applied to 100~300 m/mim process and large width treatment up to 2 m. Several linear surface treatment sources have been proposed to the RTR process. ...

Continuous cost reduction of silicon-based solar cells is needed to lower the process time and increase efficiency. To achieve lower costs, screen-printed texture-barrier (SPTB) paste was first developed for single-side texturization (ST) of the interdigitated back-contact (IBC) for silicon-based solar cell applications. The SPTB paste was screen-printed on silicon substrates. The SPTB paste wa...

Quantum confinement (QC) typically assumes a sharp interface between a nanostructure and its environment, leading to an abrupt change in the potential for confined electrons and holes. When the interface is not ideally sharp and clean, significant deviations from the QC rule appear and other parameters beyond the nanostructure size play a considerable role. In this work we elucidate the role of...

Vertically aligned carbon nanofibers ~VACNFs! are extremely promising cathode materials for microfabricated field emission devices, due to their low threshold field to initiate electron emission, inherent stability, and ruggedness, and relative ease of fabrication at moderate growth temperatures. We report on a process for fabricating gated cathode structures that uses a single in situ grown ca...

Cap layers for Cu interconnects in ultra-large-scale integrated devices (ULSIs), with a low dielectric constant (k-value) and strong barrier properties against Cu and moisture diffusion, are required for the future further scaling of ULSIs. There is a trade-off, however, between reducing the k-value and maintaining strong barrier properties. Using quantum mechanical simulations and other theore...

In this study, we present selected reliability issues of double gate dielectric stacks for non-volatile semiconductor memory (NVSM) applications. Fabricated gate structures were consisted of PECVD silicon oxynitride layer (SiOxNy) as the pedestal layer and hafnium dioxide layer (HfO2) as the top gate dielectric. In the course of this work, obtained MIS structures were investigated by means of c...