The Mawat ophiolite complex is of Cretaceous period as a residue oceanic crust covers about 200 km2, Northeastern Iraq.. serpentinite rocks are exposed diapir in the northeastern suture Zagros zone Iraq near Beetwat village, field study and petrography reveal two types serpentinite, shear massive, with three serpentine varieties. affected by secondary processes such diagenesis, metamorphism hyd...

the qom formation, which hosts the mazraeh celestite deposit, contains dominantly limestones, marl and subordinate evaporites deposited in shallow marine environments. petrographic evidence indicates that the celestite deposits were formed by replacement of limestone. the presence of carbonate inclusions within celestite crystals as well as the pseudomorphic habits of some crystals suggests tha...

This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO₂) as a gate dielectric. Sulfur pretreatment and postoxidation rapid thermal annealing (RTA) were consecutively employed before and after the gate dielectric was deposited to fi...

—This paper presents the design of a highly linear broadband power amplifier (PA) operating from 200MHz to 3GHz for Long Term Evolution (LTE) pico-cell base station. The monolithic microwave integrated circuit (MMIC) PA is realized with 0.25-μm Enhancement Mode Pseudomorphic High Electron Mobility Transistor (E-pHEMT) process. The broadband PA employs a novel dual feedback technique to achieve...

The enormous research on magnetic properties of ultrathin films and nanostructures produces also new activities in the fundamental understanding of the magnetic anisotropy energy (MAE) and the anisotropy of the orbital magnetic moment/atom. The pseudomorphic growth of Fe, Co, Ni on metallic and non-metallic substrates can change the nearest neighbor distance by ≈ 0.05 Å. This small change in st...

We have measured the high-field transport characteristics of pseudomorphic InAs,Pi JInP (0.3<x<l.O) modulation doped heterostructures at 300 and 77 K. The field dependent steady state average velocities increase steadily with increase in x. The maximum velocities that have been measured in InAs/InP are 1.7~ lo7 cm/s (2.5 kV/cm) and 3.2~ 10’ cm/s (2.2 kV/cm) at 300 and 77 K, respectively. These ...

We present 30-nm InAs pseudomorphic HEMTs (PHEMTs) on an InP substrate with record fT characteristics and well-balanced fT and fmax values. This result was obtained by improving short-channel effects through widening of the siderecess spacing (Lside) to 150 nm, as well as reducing parasitic source and drain resistances. To compensate for an increase in Rs and Rd due to Lside widening, we optimi...