The density and spatial distribution of oxide precipitates within a crystalline silicon wafer is of paramount importance for microelectronic device yield. In this letter, the authors show how the formation of previously unconsidered, very small vacancy aggregates can explain macroscopic spatial variations in the oxide precipitate density, which are observed following certain rapid thermal annea...

Abstract A model for the emission of point defects by defect sinks is proposed object kinetic Monte Carlo simulations. Local equilibrium in vicinity ensured construction, even if elastic interactions are taken into account diffusion defects. The vacancies dislocation segments treated detail and validated numerically. then used to simulate annealing a vacancy Frank loop system containing surface...

Like most other minerals, titanite rarely if ever forms perfect crystals. In addition to the point defects that might affect lattice diffusion, there may be extended lineor planar defects along which fast diffusion could occur. During the course of an experimental study of oxygen lattice diffusion in titanite, we found that almost all of the O uptake profiles produced in natural titanite crysta...

The asymmetric exclusion process on a ring in one-dimension is considered with a single defect particle. The steady state has previously been solved by a matrix product method. Here we use the Bethe ansatz to solve exactly for the long time limit behaviour of the generating function of the distance travelled by the defect particle. This allows us to recover steady state properties known from th...