Abstruct-A new LC voltagecontrolled oscillator circuit topology is proposed, in which the flicker noise generated by the tail transistor is noticeably reduced by utilizing the phenomenon of flicker noise intrinsic reduction due to switched biasing. A macro model of MOSFET under switched biasing is used to prove the idea. Circuit simulations are done on two oscillators with the same tail current...

The source follower circuit is used as a voltage buffer and level shifter. It is more flexible level shifter as the dc value of voltage level can be adjusted by changing aspect ratio of MOSFETs. It is desired to have low output resistance for such applications. Source follower can give minimum output resistance 1/(gm+gmb) with load resistance and channel resistance tending to infinity. The supe...

In this study, design theory and analysis for the class E power amplifier (PA), considering the metal oxide semiconductor field effect transistor (MOSFET) parasitic input and output capacitances, are proposed. The input resistance and capacitances cause non-ideal input voltage at gate terminal, which affect the specifications of the class E PA. In the proposed study, non-linear drain-to-source,...

This paper analyzes maximum output power of class E amplifier with arbitrary transistor. It is important to estimate maximum output power of class E amplifier when a specification of transistor is given. In this paper, values of circuit parameters that gives maximum output power for given operating frequency, dc supply voltage, and output capacitance of the transistor are calculated. This paper...

Abstract For understanding of the device operations and its interaction with the circuit in the nano scale era, the device simulation has been extended to include the quantum transport effects, statistical effects and to be compatible with the circuit simulation environments. To do so, the full Newton scheme has been developed to fully integrate the Poisson equation, transport equation and the ...

In sub-micron technologies MOSFETs are modeled by complex nonlinear equations. These equations include many process parameters, terminal voltages of the transistor and also the transistor geometries; channel width (W) and length (L) parameters. The designers have to choose the most suitable transistor geometries considering the critical parameters, which determine the DC and AC characteristics ...

This paper presents simple and low-cost, real time in-circuit condition monitoring of MOSFET in power electronic converters. Design metrics requirements like low cost, small size, high power factor, low percentage of total harmonic distortion etc. requires the power electronic systems to operate at high frequencies and at high power density. Failures of power converters are attributed largely b...

The aim of this paper is to study and investigate the performance power factor correction (PFC) circuit implemented with semi bridge-less configuration. transistor-diode module APT50N60JCCU2 has been used in proposed UCC28070 controller as a controlling device for circuit. Testing performed two steps. In first step, test was conducted<br /> on (230 Vac), while second conducted (115 Vac) a...

The scale-down of CMOS technology has been the driving force for the realization of high-performance very-large scale integration (VLSI) systems [1]. As the MOSFET channel length is reduced to 50nm and below, the suppression of the off-state leakage becomes an increasingly difficult technological challenge. However, the off-state leakage can be utilized as the operating current to achieve ultra...