We present the Molecular Beam Epitaxy fabrication of complex GaAs/AlGaAs nanostructures by Droplet Epitaxy, characterized by the presence of concentric multiple rings. We propose an innovative experimental procedure that allows the fabrication of individual portions of the structure, controlling their diameter by only changing the substrate temperature. The obtained nanocrystals show a signific...

The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence proper...

postannealed InAs layers deposited by molecular beam epitaxy R. González-Arrabal, Y. González, L. González, M. García-Hernández, F. Munnik, and M. S. Martín-González Instituto de Microelectrónica de Madrid CSIC C/Isaac Newton, 8. Tres Cantos, E-28760 Madrid, Spain Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, E-28049 Madrid, Spain Institute of Ion Beam Physics and Materials ...

Epitaxial perovskite self-oxidized oxynitride N:BaTiO 3 thin films, deposited on 1% Nb-doped SrTiO (001) single crystals, were obtained by atomic nitrogen assisted molecular beam epitaxy without supplying additional oxygen gas. Their growth,...

P-type GaAs/AlAs distributed Bragg mirrors have been grown using molecular beam epitaxy on (100) and (311)A GaAs substrates in a similar conditions. A comparison of I-V measurements shows that the resistance of the ungraded mirrors grown on the (311)A substrate is 35 times lower than those grown on the (100) substrate with similar structure. The effective barrier heights for both (311 )A and (1...