نتایج جستجو برای: intrinsic gate delay time

تعداد نتایج: 2080853  

2007
Wangqi Qiu

Fault Simulation and Test Generation for Small Delay Faults. (December 2006) Wangqi Qiu, B.S., Fudan University, China Chair of Advisory Committee: Dr. Duncan M. Walker Delay faults are an increasingly important test challenge. Traditional delay fault models are incomplete in that they model only a subset of delay defect behaviors. To solve this problem, a more realistic delay fault model has b...

2001
Andrew R. Brown Asen Asenov Jeremy R. Watling

We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter. The employed “atomistic” drift-diffusion simulation approach includes quantum corrections based on the density gradient formalism. The quantum confinement and source-to-drain tunnelling effects are carefully calibra...

Journal: :Perform. Eval. 2002
Dieter Fiems Stijn De Vuyst Herwig Bruneel

We consider a discrete-time gated vacation system. The available buffer space is divided into two subsequent queues separated by a gate and new customers arrive either before or after this gate. Whenever all customers after the gate are served, the server takes a vacation. After each vacation, the gate opens which causes all waiting customers to move to the buffer space after the gate. The mode...

Journal: :IEEE Transactions on Nuclear Science 1972

2014
Xiaohui Fan Yangbo Wu Haiyan Ni Jianping Hu

With the technology process scaling, leakage power dissipation is becoming a growing number of percentage in total power dissipation. This study presents a new method in the gate-length biasing technique to achieve a cost-effective gate-length with a most benefit between leakage reduction and delay increasing. With the optimized gate-length, typical combinational and sequential circuits are rea...

Among the many force s to which hydraulic structures are exposed to, the forces induced by cavitation incident are of typical hydrodynamic unknown forces. The aim of this study is to define these forces as coupled fluid-structure interaction under two dynamic effects. The first dynamic effect which incorporates facilities for dealing with cavitation fluid is based on the appearance and bursting...

Journal: :CoRR 2013
Sang Hyun Kim Eric Feron

Robustness is as important as efficiency in air transportation. All components in the air traffic system are connected to form an interactive network. So, a disturbance that occurs in one component, for example, a severe delay at an airport, can influence the entire network. Delays are easily propagated between flights through gates, but the propagation can be reduced if gate assignments are ro...

Journal: :international journal of civil engineering 0
m.h. sebt h. rajaei m.m. pakseresht

project participants are becoming more aware of the high costs and risks associated with delay claims and their litigation. among delays, weather delay has an important role in projects performed in severe environmental conditions. this research is the extension of delay analysis techniques by approving analysis of weather delays using fuzzy logic. at the presented technique, first using a fuzz...

2013
C. S. Ravichandran

This paper analyses techniques to measure the delay of 64 bit and 128-bit carry select adders .This is used for high-performance and low-power applications. It is introduced to work at a lower time delay than that required by a Ripple Carry Adder. This paper uses a very simple and efficient gate-level modification technique to significantly reduce the delay of the CSA. The proposed design has r...

2015
Neha Gupta Ajay Kumar Rishu Chaujar

In this paper, we explore the quantitative investigation of the high-frequency performance of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire (SiNW) MOSFET and compared with Silicon Nanowire MOSFET(SiNW MOSFET) using device simulators: ATLAS and DEVEDIT 3D. Simulation results demonstrate the improved RF performance exhibited by GEWE-SiNW MOSFET over SiNW MOSFET in terms of transc...

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