Proton implantation-induced intermixing of InAs quantum dots QDs capped with InP, GaInAsP, and InP and InGaAs layers grown by metal-organic chemical vapor deposition is investigated. The samples are annealed at 750, 800, 850, and 900 °C for 30 s and thermal stability of the QDs is studied. The optimum annealing temperature is around 800 °C which gives maximum implantation-induced energy shift. ...

InP/ZnSe/ZnS QDs with surface fluorination treatment were fabricated and their nonlinear saturable absorption properties explored. Passive Q-switching of diode-pumped Nd:YVO 4 near-infrared laser at 1064 nm (∼1.0 μm) using InP-HF as absorber (SA) is observed.

1 MeV Fe' was implanted into n-type InP and InGaAs layers at different substrate temperatures, -196'C, room temperature (RT), 100°C and 2OO0C to obtain highresistivity regions. The sheet resistivity of the InP and InGaAs epilayers grown on semiinsulating (SI) InP substrates was measured as a function of substrate temperature and post-implantation annealing temperature (100 SOO'C). For InP, a ma...

The basic active and passive elements for a 50 nm InGaAs-InAlAs-InP HEMT process with pseudomorphic InGaAs channel have been realized. The design and fabrication of 50 nm gate length InP HEMTs, MIM capacitors and thin film resistors have been studied. The integration of the components in a microstrip-based MMIC process has been proven by the successful demonstration of a wideband amplifier.

Although InP/GaAs0.51Sb0.49/InP DHBT has recently attracted much interest, some sensitive material parameters are still uncertain. We detailed the simulation methodology used to evaluate bandgap energy, minority carrier lifetime and band gap narrowing effect. Moreover, the high-injection effect is analysed as resulting from electron parasitic barrier formation at base-collector junction.

In this paper we report some recent progress in 77GHz InP Gunn device process development. Specifically, utilizing an advanced dry etching tool to define InP Gunn diode mesas. Unlike FeCl3-based photochemical etches, the Inductively Coupled Plasma (ICP) offers excellent sidewall anisotropy and uniformity, which provides improved process consistency to facilitate mass manufacturablity of millime...

This paper reports on a planar integrated technology which, unlike previous approaches, utilizes InP-based materials and airbridge technology to reduce parasitics by avoiding the use of a bridge-supporting dielectric. Verticalheterojunction varactors (VHV) and mixers were grown by the in-house Metalorganic-Chemical Vapor Deposition (MOCVD) system on S.1. InP substrates. A novel process is prese...

BACKGROUND When evaluating the toxicity of engineered nanomaterials (ENMS) it is important to use multiple bioassays based on different mechanisms of action. In this regard we evaluated the use of gene expression and common cytotoxicity measurements using as test materials, two selected nanoparticles with known differences in toxicity, 5 nm mercaptoundecanoic acid (MUA)-capped InP and CdSe quan...

The present study examined whether replacing fat with inulin or lupin-kernel fibre influenced palatability, perceptions of satiety, and food intake in thirty-three healthy men (mean age 52 years, BMI 27.4 kg/m(2)), using a within-subject design. On separate occasions, after fasting overnight, the participants consumed a breakfast consisting primarily of either a full-fat sausage patty (FFP) or ...

The effects of inhaled PAF on the guinea pig nasal mucosa were investigated. Intranasal pressure (INP) was recorded as an index of intranasal resistance. To access the capillary premeability of nasal mucosa, exudation of Evans blue into the nasal lavage fluid was determined. Inhalations of histamine and PAF markedly and significantly increased INP and dye exudation into the nasal cavities. The ...