The dielectric behavior of SrTiO3 thin films prepared by the pulsed-laser deposition technique on SrTiO3 single-crystal substrates is studied under dc electric field. A high dielectric constant maximum «max(;2280) and a low-loss tan d (;0.001) are obtained. Compared with the observation in SrTiO3 single crystals, an additional dielectric loss peak with frequency dispersion is observed around 15...

The dc electric-field dependence of dielectric constant in the paraelectrics, KTaO3 single crystals, CaTiO3 and (Ln1/2Na1/2)TiO3 (Ln5La and Nd! ceramics is studied at cryogenic temperatures in the dc electric-field range 0–60 kV/cm. The results indicate that KTaO3 possesses a high tunability K$5@e(E0)2e(E)#/e(E0) 5;50%% at 20 kV/cm, and low dielectric loss tan d (;0.003); while CaTiO3 and (Ln1/...

Single crystals of nonlinear optical material bis (guanidinium) hydrogen phosphate monohydrate (G2HP) belonging to non centrosymmetric space group P 21c were successfully grown by the slow evaporation method. Optical transmittance and second harmonic generation of the grown crystals have been studied by UV-vis-NIR spectrum and Kurtz powder technique respectively. The transmittance of G2HP cryst...

Using a combination of dielectric spectroscopy and atomistic computer simulation techniques, the dynamical behaviour of loosely bound cations in the stuffed-silica minerals nepheline, yoshiokaite and ß-eucryptite has been investigated. The investigation has been extended to include the feldspar minerals albite, K-feldspar and anorthite. The low-frequency dielectric properties of all of the mine...

A facile strategy is adopted to prepare carboxylic functionalized multiwalled carbon nanotube (c-MWCNT) modified high dielectric constant (high-k) poly(vinylidene fluoride) (PVDF) composites with the aid of methyl methacrylate-co-glycidyl methacrylate copolymer (MG). The MG is miscible with PVDF and the epoxy groups of the copolymer can react with the carboxylic groups of c-MWCNT, which induce ...

The Tunneling-Dielectric TFT (TDTFT), that has thin dielectric films at both ends of the channel fabrication area, was fabricated with 1.7 nm SiNX film by LPCVD method. The conduction mechanism of the drain currents was examined in the temperatures from 293 to 623 K experimentally and theoretically. The Id-Vg characteristics were reproduced by the direct tunneling (DT) via SiNX film with an ass...

The thickness decrease of the SiO2 used as the gate oxide of MOS devices has become one of the main showstoppers of the microelectronic scaling down process, due to a dramatic increase of leakage currents and a decrease in lifetime[1]. The use of an alternative material with a higher dielectric constant (high-K) has been proposed to replace SiO2 as the gate dielectric, because High-K materials ...

The electrical conduction phenomena, dielectric response and microstructure have been discussed in sintered silicon nitride ceramics at different temperature and frequencies. Microstructure and phase of the sintered samples was investigated by Scanning Electron Microscope (SEM) and X-ray diffractometer (XRD). The electrical conductivity, dielectric constant and dielectric loss increases exponen...

The ubiquity of threshold voltage relaxation is demonstrated in samples with both conventional and high-k dielectrics following various stress conditions. A technique based on recording short traces of relaxation during each measurement phase of a standard measure-stress-measure sequence allows monitoring and correcting for the otherwise-unknown relaxation component. The properties of relaxatio...