Ta-doped hematite (α-Fe2O3) nanorod array films were successfully prepared on fluorine-doped tin dioxide (FTO) coated glass substrates via a facile solution growth process with TaCl5 as a Ta doping precursor. Under 1 sun illumination and at an applied potential of 1.0 V vs. Ag/AgCl, the Ta-doped α-Fe2O3 photoanode with optimized dopant concentration showed a photocurrent density as high as 0.53...

Foamed alumina was previously synthesised by direct foaming of sulphate salt blends varying ammonium mole fraction (AMF), foaming heating rate and sintering temperature. The optimal product was produced with 0.33AMF, foaming at 100 °C/h and sintering at 1600 °C. This product attained high porosity of 94.39%, large average pore size of 300 µm and the highest compressive strength of 384 kPa. To i...

In this work, we investigated the effect of Rb and Ta doping on the ionic conductivity and stability of the garnet Li7+2x−y(La3−xRbx)(Zr2−yTay)O12 (0 ≤ x ≤ 0.375, 0 ≤ y ≤ 1) superionic conductor using first principles calculations. Our results indicate that doping does not greatly alter the topology of the migration pathway, but instead acts primarily to change the lithium concentration. The st...

Selectively doped Gex Si , _ x lSi strained layer heterostructures have been grown in a single quantum well configuration on (OOl)-Si substrate using molecular beam epitaxy. The modulation doping effect has been observed inp-type structures only; although both nandp-type double heterostructures were grown. We have investigated the effects of: (i) alloy layer thickness (well width), (ii) doping ...

Group IIIA elements (B, Ga, In, and Tl) have been doped into PbSe for enhancement of thermoelectric properties. The electrical conductivity, Seebeck coefficient, and thermal conductivity were systematically studied. Room-temperature Hall measurements showed an effective increase in the electron concentration upon both Ga and In doping and the hole concentration upon Tl doping to ~7 × 10(19) cm(...

In this paper we present the fluorescence decay profiles of vanadium and titanium doped gallium lanthanum sulphide (GLS) glass at various doping concentrations between 0.01 and 1% (molar). We demonstrate that below a critical doping concentration the fluorescence decay profile can be fitted with the stretched exponential function: exp[-(t/τ)], where τ is the fluorescence lifetime and β is the s...

We present a new method to extract resistivity and doping concentration of semiconductor materials from Scanning Microwave Microscopy (SMM) S11 reflection measurements. Using a three error parameters de-embedding workflow, the S11 raw data are converted into calibrated capacitance and resistance images where no calibration sample is required. The SMM capacitance and resistance values were measu...

Active doping of B was observed in nanometer silicon layers confined in SiO(2) layers by secondary ion mass spectrometry (SIMS) depth profiling analysis and confirmed by Hall effect measurements. The uniformly distributed boron atoms in the B-doped silicon layers of [SiO(2) (8 nm)/B-doped Si(10 nm)](5) films turned out to be segregated into the Si/SiO(2) interfaces and the Si bulk, forming a di...

Three non-metallic elements, sulfur, fluorine, and iodine, were used to dope the ultrathin two-dimensional TiO₂ nanosheets, which would regulate their electroanalytical properties toward heavy metal ions. Among these doped materials, fluorine-doped TiO₂ nanosheets shows the highest electrochemical sensitivity and a superior detection limit toward Pb(II) when the doping concentration is 10%. Whe...

Doping nanowires (NWs) is of crucial importance for a range of applications due to the unique properties arising from both impurities' incorporation and nanoscale dimensions. However, existing doping methods face the challenge of simultaneous control over the morphology, crystallinity, dopant distribution and concentration at the nanometer scale. Here, we present a controllable and reliable met...