We describe the design, fabrication, and testing of a spectroscopic refractometer that employs plasmonic interferometry to measure the optical dielectric functions of materials in the visible range. The proposed device, dubbed a plasmonic refractometer, consists of an array of slit-groove plasmonic interferometers etched in a 300 nm-thick metal film (silver or gold) with arm lengths varying in ...

Polycrystalline ceramics of bismuth layered structure of (Bi2O3)(BaxFe1-xO3) (0.2x0.8, x is in step of 0.2) have been prepared by conventional solid-state reaction method to study its modified dielectric and electrical properties. X-ray diffraction technique is used on the powdered samples for physical characterization and an average grain size of 16 – 21 nm was obtained. The XRD analysis rev...

The paper presents a simulation study of the electrical characteristic of Bulk Planar Junctionless Transistor (BPJLT) using spacer. The BPJLT is a transistor without any PN junctions in the vertical direction. It is a gate controlled variable resistor. The characteristics of BPJLT are analyzed by varying the oxide material under the gate. It can be shown from the simulation that an ideal subthr...

The use of the chemical-mechanical polishing (CMP) process in the semiconductor industry is growing rapidly, and it is a critical step in the manufacturing of integrated circuits. The CMP process is complicated by many factors, and controlling all of these factors in a single controller has been unrealistic. One of the most significant factors complicating control is the dependency of the polis...

The article provides information on the “Dielectric” device for sorting seeds of agricultural crops and results theoretical research seed sorting. experiments showed that diameter number turns working body rice in device, expected result can be achieved by applying high voltage to electrodes with opposite signals.

In this paper we present a vertical-cavity enhanced resonant thermal emitter—a highly directional, narrowband, tunable, partially coherent thermal source. This device enhances thermal emittance of a metallic or any other highly reflective structure to unity near a cavity resonant frequency. The structure consists of a planar metallic surface e.g., silver, tungsten , a dielectric layer on top of...

Conditions for the transfer printing of patterned carbon nanotube (CNT) films, along with a Au-gate, a poly methylmethacrylate (PMMA) dielectric layer and Au source-drain electrodes have been developed for the fabrication of thin-film transistors on a polyethylene terephthalate (PET) substrate. Chemical vapor deposition (CVD) grown CNTs were patterned using a photolithographic method. Transfer ...

Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spontaneous and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of investigating scaling properties of gate-stacks consisting atomic-layer deposited Al2O3/III-Nitride heterojunctions, we find interface charges that appear closely linked to the polarization charges of the unde...

A processing technology has been developed to produce inverted two-dimensional photonic crystal structures by embedding an array of silicon pillars inside a polyimide matrix and releasing this structure from the underlying substrate. The spatial distribution of the high dielectric and low dielectric regions of these structures is inverted compared to the spatial distribution of standard photoni...

In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs...