نتایج جستجو برای: dibl
تعداد نتایج: 173 فیلتر نتایج به سال:
The rapid scaling of integrated circuit requires further shrinkage of lateral device dimension, which correlates with pillar thickness in vertical structure. This paper investigates the effect of pillar thickness variation on vertical double gate MOSFET (VDGM) fabricated using oblique rotating ion implantation (ORI) method. For this purpose, several scenarios of silicon pillar thickness tsi wer...
As scaling down MOSFET devices degrade device performance in term of leakage current and short channel effects. To overcome the problem a newer device Silicon-on-Insulator (SOI) MOSFET has been introduced. The Fully Depleted (FD) SOI MOSFETs also suffer from short channel effects (SCE) in the sub 65 nm regime due to reduction in threshold voltage. Several investigations are going to reduce the ...
Considerable challenges are encountered when bulk CMOS devices are scaled into the sub-100 nm regime for higher integrated circuit (IC) density and performance. Due to their excellent scalability and better immunity to short channel effects, double-gate (DG) MOSFETs are being easily assessed for CMOS applications beyond the 70 nm of the SIA roadmap. For channel lengths below 100 nm, DG MOSFETs ...
The potential impact of high permittivity gate dielectrics on device short channel and circuit performance is studied over a wide range of dielectric permittivities ( gate) using two-dimensional (2-D) device and Monte Carlo simulations. The gate-to-channel capacitance and parasitic fringe capacitances are extracted using a highly accurate three-dimensional (3-D) capacitance extractor. It is obs...
Though silicon tunnel field effect transistor (TFET) has attracted attention for sub-60mV/decade subthreshold swing and very small OFF current (IOFF), its practical application is questionable due to low ON current (ION) and complicated fabrication process steps. In this paper, a new n-type classical-MOSFET-alike tunnel FET architecture is proposed, which offers sub-60mV/decade subthreshold swi...
Ultrathin Hf-Ti-O higher k gate dielectric films (~2.55 nm) have been prepared by atomic layer deposition. Their electrical properties and application in ETSOI (fully depleted extremely thin SOI) PMOSFETs were studied. It is found that at the Ti concentration of Ti/(Ti + Hf) ~9.4%, low equivalent gate oxide thickness (EOT) of ~0.69 nm and acceptable gate leakage current density of 0.61 A/cm2 @ ...
In view of difficulties of the planar MOSFET technology to get the acceptable gate control over the channel FinFET technology based on multiple gate devices is better technology option for further shrinking the size of the planar MOSFET [1]. For double gate SOIMOSFET the gates control the channel created between source and drain terminal effectively. So the several short channel effects like DI...
In this paper, the performance of GaAs and GaSb based sub-10 nm double-gate junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been studied for high-performance switching applications. The quantum transmitting boundary method (QTBM) has considered electron transport, band structures are accounted sp3d5s* tight-binding modeling. channel thickness, t <sub xmlns:mm...
Nanosheets are the revolutionary change to overcome limitations of FinFET. In this paper, temperature dependence 10 nm junctionless (JL) nanosheet FET performance on DC and analog/RF characteristics investigated for first time using extended source/drain with high-k gate stack. The detailed analysis like transfer (ID-VGS), output (ID-VDS), drain induced barrier lowering (DIBL), subthreshold swi...
در این مقاله ساختار جدیدی از ترانزیستور دوگیتی به نام ترانزیستور dm-dg ارائه شده است. در این ساختار با به کار بردن عایق hfo2 در مرز ناحیه کانال و درین و همین طور استفاده از سیلیسیم-ژرمانیوم در ناحیه سورس منجر به بهبود ساختار در مقایسه با ساختارهای متداول دوگیتی (c-dg) شده است. ناحیه عایق hfo2 به طور قابل توجهی میدان الکتریکی را در ناحیه کانال و درین کاهش می دهد؛ بنابراین فرآیندهای مخرب در ساختا...
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