We found that the extinction coefficient of ion-beam-sputtered titanium dioxide films first decreased with increasing annealing temperature then increased drastically when annealing temperature was increased above ~200 degrees C for 24 h of annealing time. The decreasing extinction coefficient with annealing temperature was attributed to a reduction in absorption owing to oxidation of the film ...

Fe(TexSy) films were fabricated on (100) SrTiO3 substrates from Fe(Te0.65S0.16) amorphous precursors by a solid phase epitaxial growth process under various background atmospheric conditions. Structural analysis by x-ray diffraction showed strong peaks corresponding to Fe(TexSy) phases, when the amorphous precursors were heated with Fe(Te0.8S0.2) sintered pellets. The crystallinity of the films...

Amorphous Si (a-Si) films with metal silicide are expected to enhance the absorption ability of pure a-Si films. In this present study, NiSi (20 nm)/Si (40 nm) and AlSi (20 nm)/Si (40 nm) bilayer thin films are deposited through radio frequency (RF) sputtering at room temperature. The influence of the film's composition and the annealing temperature on the film's optical absorption is investiga...

Tungsten doped amorphous carbon films are prepared on silicon 100 by postimplantation of tungsten ions into pure amorphous hydrogenated carbon using the plasma immersion ion implantation technique. The peak concentration of tungsten reaches 27 at. % and W–C nanocrystallites with largest diameters of 5 nm are formed in the near surface region. Both the quantity and size of these nanocrystallites...

In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a very thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by Spectroscopic Ellipsometry in the UV-visible range. These measurements reveal that the ...

Amorphous silicon film (α-Si) doped with uniform erbium (Er) impurities is deposited by laser ablation technology. High density silicon nanocrystals (nc-Si) can be formed after the rapid thermal annealing (RTA) process. The crystalline process can be explained as the “metal-induced nanocrystalline mechanism”, i.e., doped erbium atoms introduce additional strain in the amorphous silicon matrix a...

Photostructural transformations in amorphous films of chalcogenide glasses (ChG) under light irradiation present scientific and practical interests. That is well known that the composition of ChG determines the kind of structural units and the mean coordination number. In the present work the amorphous films of the chalcogenide systems As100-xSex (x=40÷98), As40Se60:Sny (y=0÷10.0 at.% Sn), as w...

This submitted manuscript describes the development, fabrication and characterization of soft-magnetic thin films for high frequency applications up to GHz frequencies. These high frequency suitable films were investigated with the prospective use as magnetic core material, for the assembly of micro inductors or micro sensors for the micro electronic and micro system technology. Within the scop...

Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. We examine solidification in thin liquid films produced by annealing amorphous Alq 3 (tris-(8-hydroxyquinoline) alu...

At room temperature, 300 K, silicon carbide film was formed using monomethylsilane gas on the reactive surface prepared using argon plasma. Entire process was performed at reduced pressure of 10 Pa in the argon plasma etcher, without a substrate transfer operation. By this process, the several-nanometer-thick amorphous thin film containing silicon-carbon bonds was obtained on various substrates...