نتایج جستجو برای: wave semiconductor laser amplifier
تعداد نتایج: 460662 فیلتر نتایج به سال:
A numerical investigation on the dynamic large-signal analysis using a time-domain traveling wave model of quarter wave-shifted distributed feedback semiconductor lasers diode with a Gaussian distribution of the coupling coefficient (GDCC) is presented. It is found that the single-mode behavior and the more hole-burning effect corrections of quarter wave-shifted distributed feedback laser with ...
In this paper, we present a high accuracy laser range finder and velocimeter using ultra-fast time-to-digital converter (TDC). The system operation is based on the measuring the round-trip time of a narrow laser pulse. A low-dark current high-speed PIN photodiode is used to detect the triggered laser beam and to produce start signal. The pulsed laser diode generates 45W optical power at 30ns du...
A continuous single-frequency tunable blue laser at 447.3 nm is developed by external-cavity frequency doubling of a tapered amplifier-boosted continuous-wave diode laser at cesium (Cs) D1 line. A maximum blue power of 178 mW with 50.8% conversion efficiency is obtained. It can be continuously tuned over a range around 1.6 GHz as the diode laser frequency is scanned across the F=4→F'...
We report a single layer InAs/InP (100) quantum dot (QD) laser operating in continuous wave mode at room temperature on the QD ground state transition grown by metal organic vapor phase epitaxy. The necessary high QD density is achieved by growing the QDs on a thin InAs quantum well (QW). This QDs on QW laser exhibits a high slope efficiency and a lasing wavelength of 1.74 μm. An extremely long...
performance of the fiber optic networks with different physical topologies such as point-to-point, bus, ring and star, with respect to requirements as bit rates, topology structure, bit. error rate (ber) and optical component characteristics including optical amplifiers, filters, sources and detectors, are analyzed and simulated. for this purpose, maximum number of supportable nodes and throug...
Stable subpicosecond infrared pulses in the spectral region of 4.5-11.5 microm are generated by difference-frequency mixing in AgGaS(2). The system uses femtosecond pulses from a Ti:sapphire regenerative amplifier and from a tunable traveling-wave dye laser. The infrared pulses have a duration of 400 fs, an energy of more than 10 nJ, and a repetition rate of 1 kHz.
Multilongitudinal-mode dynamics in a semiconductor laser subject to optical injection are investigated both experimentally and numerically. We found that there are parameter regimes for which the slave laser hops into an adjacent longitudinal mode as we vary the detuning of the optical frequencies between the master and slave laser. A traveling wave model is used to numerically investigate the ...
We demonstrated a 670 mW continuous-wave single-frequency laser source at 780 nm by using external-cavity-enhanced second-harmonic generation of a seeded fiber amplifier in periodically poled lithium niobate. A maximum second-harmonic conversion efficiency of 58% was achieved. The source can work stably over 1 h by locking the frequency-doubling cavity, while the power stability is less than 2%.
In fact, the commercial potential of the EDFA is such that the telecommunications industry has invested enormous resources in doped-fiber amplifier development over the past ten years. As a result, steady advances have occurred in fiber fabrication and design as well as in the understanding of the spectroscopic properties of rare-earth ions in a glass matrix. This research has also driven devel...
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