We show by Monte Carlo simulation that electron mobility is greater when strained-silicon inversion layers are grown on SiGe-on-insulator substrates than when unstrained-silicon-on-insulator devices are employed ~as experimentally observed!. However, the electron mobility in strained-Si/SiGe-on-insulator inversion layers is strongly dependent on the strained-silicon layer thickness, TSi , due t...

This paper addresses a study of bipolar transistors specified for analog and analog-digital low cost circuits, working in the radiofrequency range, dedicated to popular mobiles. These devices are fully compatible with a deeply submicronic silicon CMOS technology. Advanced epitaxial growth of strained SiGe on a silicon-germanium substrate enhances the freedom for designing high speed bipolar tra...

Efficient silicon-based light sources are expected to be key devices for applications such as optical interconnection. Huge number of researches has been conducted for realizing silicon-based light sources. Most of them utilized silicon-related materials such as silicon nanostructures or germanium, not crystalline silicon, which has been considered as a poor light emitter because of its indirec...

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Alloy systems comprised of silicon with germanium, lead tellurium, and bismuth antimony have constituted a majority thermoelectric applications during the last half-century. These legacy materials are primarily covalently bonded maximum ZT near one. Silicon–germanium alloys provided thermal to electrical conversion for many NASA’s radioisotope generator (RTG) configurations nearly all its deep ...

Group IV photonics hold great potential for nonlinear applications in the nearand mid-infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index contrast, CMOS compatibility, and cost-effectiveness. In this paper, we review our recent numerical work on various types of silicon and germanium waveguides for octave-spanning ultrafast nonlinear applications. We ...

We present germanium microdisk optical resonators under a large biaxial tensile strain using a CMOS-compatible fabrication process. Biaxial tensile strain of ~0.7% is achieved by means of a stress concentration technique that allows the strain level to be customized by carefully selecting certain lithographic dimensions. The partial strain relaxation at the edges of a patterned germanium microd...

In this paper, a physics based model of inversion charge sheet of nanoscale NMOSFETs has been presented. The model is formulated for nanoscale biaxial strained silicon NMOSFET including quantum mechanical effect (QME). The QME is splitting of conduction band due to very thin oxide (tox) and very large doping concentration of ultra small geometry of MOSFET. The QME shift the inversion charge she...