Related Articles Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors Appl. Phys. Lett. 101, 243501 (2012) Reduced graphene oxide based flexible organic charge trap memory devices Appl. Phys. Lett. 101, 233308 (2012) Analyzing threshold pressure limitations in microfluidic transistors for self-regulated microfluidic circuits Appl. Phys. Lett. 101, 2341...

A b s t r a c t Keywords: Cascode Topology Low Noise Amplifier Noise Figure Particle Swarm Optimization Design of a LNA is a complex process. Because it involves various parameters and needs complex trade-offs. This paper presents an optimized design of a low noise amplifier (LNA) using particle swarm optimization (PSO) technique. The proposed LNA has a cascode structure with inductive source d...

As MOS Transistors channel length continues to scale beyond 90nm, classical drift-diffusion model for carrier transport of such type of devices is not valid. For these dimensions of Transistors QuasiBallistic/ Ballistic transport phenomena occur and a new mobility model is required to predict electrical behavior of these devices perfectly. Selfheating is also one the importance critical problem...

Abstract In this paper, a 12-bit 100MS/s digital-to-analog converter (DAC) is presented, where segmented current steering technique employed. A “4+8” architecture used compromising the advantages and disadvantages of binary-weighted thermometer-coded DACs. Cascode source cascode switch to achieve high input impedance minimize output glitches for good linearity dynamic performance. The simulatio...

Related Articles Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors Appl. Phys. Lett. 101, 243501 (2012) Reduced graphene oxide based flexible organic charge trap memory devices Appl. Phys. Lett. 101, 233308 (2012) Analyzing threshold pressure limitations in microfluidic transistors for self-regulated microfluidic circuits Appl. Phys. Lett. 101, 2341...

As transistors get smaller, the simulations require full quantum-mechanical treatments. Most such approaches have treated the transport as ballistic, ignoring the scattering that is known to occur in such devices. We present the results of a three-dimensional, self-consistent quantum simulation of a silicon nanowire transistor. In these simulations we have included phonon scattering through a r...

Source-to-drain tunneling is investigated for Si triple-gate nanowire transistors. The full-band quantum transport problem is solved in an atomistic basis using the nearestneighbor sp3d5s∗ tight-binding method. It is self-consistently coupled to the threedimensional calculation of the electrostatic potential in the device using the finite element method. This procedure is applied to the computa...

Related Articles Exact control of junction position using epitaxial NiSi2 crystallization in ultrathin silicon-on-insulator metal-oxidesemiconductor field-effect transistors AIP Advances 2, 032126 (2012) Triisopropylsilylethynyl-functionalized anthradithiophene derivatives for solution processable organic field effect transistors Appl. Phys. Lett. 101, 043301 (2012) Electric field-induced scatt...

A multiplexer is a unidirectional device and used in any application in which data must be switched from multiple sources to a destination. The low power circuits have become a top priority in modern VLSI design. This paper presents the power consumption comparisons and delay of various designs of 2:1 Multiplexer. The various logic styles such as Differential Cascode Voltage Switch Logic (DCVSL...

This paper presents the designing of a fully differential folded cascode operational transconductance amplifier (OTA) with common mode feedback circuit (CMFB). The designed OTA is operated in sub-threshold region to reduce the power consumption. The simulation is carried out in CADENCE environment using 150nm CMOS. The simulation result shows the DC gain of 82 dB with UGBW of 768 KHz, CMRR of 1...