Abstract In this study, siloxane has been used for the protection of metal artifacts from corrosion in form transparent barrier coating films because their good adhesion to substrate. The effect oxygen plasma pre-treatment on properties thin film silver-copper alloy substrate was investigated. Radiofrequency plasma-enhanced chemical vapor deposition (RF-PECVD) process. Surface identification an...

The homoepitaxy of Si is particularly interesting for the purpose kerfless wafer production, example in photovoltaic domain. Substrate surface engineering a key step prior to epitaxial growth, which will affect quality layer and its detachment transfer. In this work, we propose two plasma-based methods including deposition bilayer homoepitaxial interface SiGe heteroepitaxial interface. Their im...

ZnO thin films were synthesized on silicon and glass substrates using the plasma-enhanced chemical vapor deposition (PECVD) technique. Three samples prepared at temperatures of 200, 300, 400 °C. The surface composition was analyzed by use X-Ray Photoelectron spectroscopy (XPS). Structural morphological properties studied X-ray diffraction (XRD) scanning electron microscopy (SEM). Optical carrie...

The development of an in situ nonthermal plasma technology improved the oxidation and energy release boron nanoparticles. We reduced native oxide layer on surface nanoparticles (70 nm) by treatment a hydrogen plasma, followed formation passivation barrier argon plasma-enhanced chemical vapor deposition (PECVD) using perfluorodecalin (C10F18). Both processes occur near room temperature, thus avo...

Si nanowires (NWs) are grown by the vapor–liquid–solid method using Cu–Sn bimetallic catalysts in a plasma-enhanced chemical vapor deposition (PECVD) reactor. The microstructure of NWs is analyzed transmission electron microscopy and energy-dispersive X-ray spectroscopy. An amorphous SiO2 region, much larger than native oxide, present on top each crystalline SiNW: SiNWs with diameter below 10 n...

We present a model for build-up of intrinsic stress during the deposition of thin metal films. The model assumes a three-phase stress generation mechanism which corresponds to three characteristic phases of microstructure evolution. The simulation results based on the model are successfully compared with experimental results for Poly-SiGe PECVD films. The impact of critical parameter variation ...

Triple-junction a-Si/a-SiGe/a-SiGe solar cells are fabricated in our laboratory using a multi-chamber, loadlocked PECVD system. By improving intrinsic layers, doped layers and using bandgap graded buffer layers for aSiGe component cells, we improved our triple-cell performance and achieved a 12.71% initial efficiency and a 10.7% stable efficiency after 1000 hours of 1-sun light soaking. Samples...