نتایج جستجو برای: molecular beam epitaxy
تعداد نتایج: 746525 فیلتر نتایج به سال:
We present a study on the effects of quantum dot coverage on the properties of InAs dots embedded in GaAs and in metamorphic In0.15Ga0.85As confining layers grown by molecular beam epitaxy on GaAs substrates. We show that redshifted emission wavelengths exceeding 1.3 μm at room temperature were obtained by the combined use of InGaAs confining layers and high quantum dot coverage. The use of hig...
We present a temperature-dependence photoluminescence of (GaAs)5/(AlAs)5 superlattice grown on (311)A-oriented semi-insulating substrate by molecular beam epitaxy. The temperature dependence reveals an anomalous decrease of the PL width, which is explained in terms of phonon-assisted thermal activation of localized excitons. q 2004 Elsevier Ltd. All rights reserved. PACS: 23.23. þ x; 56.65.Dy
We have examined the structural properties of InP/In0.53Ga0.47As superlattices grown by metalorganic molecular beam epitaxy by varying the periodicity and the total thickness. We observed a roughening transition, which involves the formation of wavy interfaces, when the period and total thickness of the superlattice exceeded critical values. Interface roughening in the wake of the growth front ...
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