A review is presented describing the development of TiN-CVD from the classical, high temperature T iClm2 process, towards low temperature MOCVD processes. This development is presented from a chemical point of view. In addition to low pressure (LPCVD) and atmospheric pressure (APCVD) thermal processing, also plasma enhanced (PECVD) techniques are described. In the past few years production faci...

This paper describes a nano-scale tensile test to study the fatigue properties of LPCVD silicon nitride thin films using a novel electrostatic actuator design. Mechanical-amplifier devices made in silicon nitride thin films can apply controllable tensile stress (2.0–7.8 GPa) to test structures with relatively low actuation voltages (5.7–35.4 VRMS) at the resonant frequencies of the devices. The...

The LPCVD of silicon oxynitride has been characterized and optimized using the Design of Experiments method. The data of a half factorial matrix were converted with multiple linear regression analysis into an adequate empirical model: it appeared to be possible to predict the process output parameters (e.g. deposition rate), when applying more or less random input parameters (e.g. process press...

p–p–n –n ultraviolet photodetectors based on 4H–SiC homoepilayers have been presented. The growth of the 4H–SiC homoepilayers was carried out in a LPCVD system. The size of the active area of the photodetectors was 300 300mm. The dark and illuminated I–V characteristics had been measured at reverse biases form 0 to 20V at room temperature, and the illuminated current was at least two orders of ...

This paper presents the design and fabrication of a new packaged MEMS capacitive temperature sensor for engine component health-monitoring applications and measurement results above 500-600°C. The multimorphs employed are thermal-SiO2/LPCVD-Si3N4/sputtered-Au beams designed for deflection at these temperatures. The mean initial capacitance of the sensors is 6.441 pF; with a standard deviation o...

A growth model for the low pressure chemical vapor deposition (LPCVD) of polycrystalline ZnO thin films is proposed. This model is based on experimental observations of the surfacemorphology and crystallographic orientations of the layers at different thicknesses and growth temperatures. It is shown that the films preferred orientation evolves from c-axis to aaxis as the growth temperature is i...

P-type and N-type multi-gate vertical thin film transistors (vertical TFTs) have been fabricated, adopting the low-temperature (T ≤ 600°C) polycrystalline silicon (polysilicon) technology. Stacked heavily-doped polysilicon source and drain are electrically isolated by an insulating barrier. Multi-teeth configuration is defined by reactive ion etching leading to sidewalls formation on which undo...

A resonant microbeam accelerometer of a novel highly symmetric structure based on MEMS bulk-silicon technology is proposed and some numerical modeling results for this scheme are presented. The accelerometer consists of two proof masses, four supporting hinges, two anchors, and a vibrating triple beam, which is clamped at both ends to the two proof masses. LPCVD silicon rich nitride is chosen a...

We present a study on thick Si-rich nitride/polycrystalline Si/silicon oxide multilayer-stacks made by LPCVD and PECVD techniques. The pattern transfer into the multilayer-stacks is achieved by dry etching techniques such as SF6-based ICP plasma and the so-called Bosch processes. The steep profiles and high selectivity obtained for the developed processes allow us to design and fabricate comple...

Several (Al,Si,N) compounds have been obtained by LPCVD in a vertical hot-wall reactor using aluminium trichloride, silicon tetrachloride and ammonia as source gases, with nitrogen as the carrier gas. In order to determine both their structure and local chemical composition, several deposits have been examined by analytical transmission electron microscopy combining electron diffraction (ED), h...