Junctionless transistors (JLTs) have promising advantages such as structural simplicity without p-n-junctions and bulk conduction-based operation for the realization of advanced complementary metal oxide semiconductor (CMOS) technologies. Here channel-length dependence on JLTs with substrate biasing (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink...

This study investigates geometrical variability on the sensitivity of the junctionless tunneling field effect transistor (JLTFET) and Heterostructure JLTFET (HJLTFET) performance. We consider the transistor gate dielectric thickness as one of the main variation sources. The impacts of variations on the analog and digital performance of the devices are calculated by using computer aided design (...

The promising capability of Triple Material Surrounding Gate Junctionless Tunnel FET (TMSG – JL TFET) based 6 T SRAM structure is demonstrated by employing Germanium (Ge) and High-K gate dielectric material. high K insulation guarantees the proposed device to be used in low leakage memory systems. corresponding analytical model developed extract various parameters such as surface potential, ele...