نتایج جستجو برای: inp
تعداد نتایج: 4104 فیلتر نتایج به سال:
InP HBT technology appears to offer the high speed, low power and basic producibility necessary to support a high-speed digital IC technology. Maximum clock speed of 53 GHz has been demonstrated at 40 mW per flip-flop (FF) as compared to well over 200 mW/FF for SiGe at slower speeds. At a power dissipation of less than 9 mW/FF, toggle rate is still a respectable 35 GHz. Producibility and high s...
Ice nucleating particles (INPs) are vital for ice initiation in, and precipitation from, mixed-phase clouds. A source of INPs from oceans within sea spray aerosol (SSA) emissions has been suggested in previous studies but remained unconfirmed. Here, we show that INPs are emitted using real wave breaking in a laboratory flume to produce SSA. The number concentrations of INPs from laboratory-gene...
We experimentally demonstrate near-unity, unselective absorption, broadband, angle-insensitive, and polarization-independent absorption, in sparse InP nanowire arrays, embedded in flexible polymer sheets via geometric control of waveguide modes in two wire motifs: (i) arrays of tapered wires and (ii) arrays of nanowires with varying radii. Sparse arrays of these structures exhibit enhanced abso...
The strain relaxation mechanism and defect properties of compositionally step-graded InAsyP1−y buffers grown by molecular beam epitaxy on InP have been investigated. InAsP layers having lattice misfits ranging from 1% to 1.4% with respect to InP, as well as subsequently grown lattice matched In0.69Ga0.31As overlayers on the metamorphic buffers were explored on both 100 and 2° offcut 100 InP sub...
We report the growth of vertical <111>-oriented InAs x P1-x (0.11 ≤ x ≤ 0.27) nanowires via metal-organic chemical vapor deposition in the presence of indium droplets as catalysts on InP(111)B substrates at 375 °C. Trimethylindium, tertiarybutylphosphine, and tertiarybutylarsine are used as the precursors, corresponding to P/In and As/In molar ratios of 29 and 0.01, respectively. The as-grown n...
The conditions under which the band gaps of free standing and embedded semiconductor quantum dots are direct or indirect are discussed. Semiconductor quantum dots are classified into three categories; (i) free standing dots, (ii) dots embedded in a direct gap matrix, and (iii) dots embedded in an indirect gap matrix. For each category, qualitative predictions are first discussed, followed by th...
The electronic parameters and interface state properties of Yb/p-InP Schottky diode have been investigated by currentvoltage (IV), capacitancevoltagefrequency (CVf ) and conductancevoltagefrequency (GVf ) measurements at room temperature. The barrier height and ideality factor of the Yb/p-InP Schottky diode are found to be 0.68 eV (IV)/0.79 eV (CV) and 1.24, respectively. As well, t...
In order to reduce the dislocation density and improve the performance of high indium content In0.82Ga0.18As films, the design of double buffer layers has been introduced into the In0.82Ga0.18As/InP heterostructure. Compared with other buffer layer structures, we introduce an InP thin layer, which is the same as the substrate, into the In0.82Ga0.18As/InP heterostructure. The epitaxial layers an...
One of the main challenges of using recombinant enzymes is that they are derived from genetically-modified microorganisms commonly located in the intracellular region. The use of these recombinant enzymes for commercial purposes requires the additional processes of cell disruption and purification, which may result in enzyme loss, denaturation, and increased total production cost. In this study...
To date, some of the highest performance photocathodes of a photoelectrochemical (PEC) cell have been shown with single-crystalline p-type InP wafers, exhibiting half-cell solar-to-hydrogen conversion efficiencies of over 14%. However, the high cost of single-crystalline InP wafers may present a challenge for future large-scale industrial deployment. Analogous to solar cells, a thin-film approa...
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