AbstructWe demonstrated the successful operation of longwavelength InGaAsP low threshold-current index-coupled and gain-coupled DFB lasers grown by chemical beam epitaxy (CBE). For index-coupled DFB lasers, buried-heterostructure six-QW DFB lasers (250 pm long and as-cleaved) operated at 1.55 Lrm with CW threshold currents 10-15 mA and slope efficiencies up to 0.35 mW/mA (both facets). A side-m...

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We propose a point-shifted D0 nanocavity formed by locally modulating four central air holes in square lattice photonic crystal for optical sensing application. Three defect modes in this nanocavity, including monopole, whispering-gallery, and dipole modes, are identified in experiments. We also apply a chemical treatment on InGaAsP surface to form a 1-octadecanethiol linking monolayer, which e...

Low-loss spot size converters (SSC) are important elements for coupling photonic integrated circuits to fibres. We have developed a Cl2-based inductively-coupled-plasma process to etch non-selectively InP and photo-resist (PR). This process was then used to transfer a vertically-tapered PR pattern into an InP/InGaAsP structure. The tapered PR pattern was made using a standard optical lithograph...

The band-to-band Auger recombination rate in bulk GaSb and in a GaSb quantum well is calculated. It turns out to be larger in the quantum well because the threshold of the Auger process is located at the band edge where the density of states is larger in the quantum well than in bulk. A simple picture is developed to illustrate the physics of the Auger processes in bulk and quantum-well direct-...

We demonstrate a novel top-down approach for fabricating nanowires with unprecedented complexity and optical quality by taking advantage of a nanoscale self-masking effect. We realized vertical arrays of nanowires of 20-40 nm in diameter with 16 segments of complex longitudinal InGaAsP/InP structures. The unprecedented high quality of etched wires is evidenced by the narrowest photoluminescence...

Multi-quantum well (MQW) electroabsorption modulators (EAMs) are attractive for applications requiring signal modulation at high speed and with high e±ciency (high extinction ratio at low voltage). They are promising devices for external signal modulation in high-bandwidth optical communication systems. EAMs can be integrated with other devices like laser diodes, semiconductor optical ampli ̄ers...

We demonstrate electrically pumped large-area edge-emitting InGaAsP/InP two-dimensional photonic crystal lasers with angled facets at room temperature. The laser uses a weak index perturbation surface photonic crystal structure to control optical modes in the wafer plane. Measurements of the laser spectra show that the modal selection is due to satisfying the Bragg resonance conditions in both ...

We present in this paper the MOCVD growth and characterization of high performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior characteristics, with threshold currents ~0.4 mA, and slope efficiencies ~ 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than ~30% when t...

We investigate active, electrically pumped coupled-resonator optical waveguides (CROWs) in the form of InP–InGaAsP Fabry–Perot resonator arrays. We discuss the fabrication of these devices and present measurements of the transmission spectra. The signal-to-noise ratio is found to be a strong function of wavelength and degraded rapidly along the resonator chain away from the input. Our results h...