Articles you may be interested in Low-noise AlInAsSb avalanche photodiode Appl. Enhanced frequency response associated with negative photoconductance in an InGaAs/InAlAs avalanche photodetector Appl.

The III–V InP/InGaAsP/InGaAs material family is important for photonic devices due to its optical emission and absorption in the 1.55 1.3 μm telecommunication bands interconnects. However, InGaAsP/InGaAs generally suffer from relatively high surface recombination velocity—compared Si [Das et al., 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) (IEEE, Calgary, AB, 2020), pp. 1167–1170]...

The shortening of the minority carrier lifetime is main reason for degradation electrical performance solar cells; therefore, it particularly important to evaluate inverted metamorphic triple junction (IMM3J) GaInP/GaAs/InGaAs cells. We each subcell IMM3J cells before and after 2 MeV proton irradiation by electroluminescence (EL) method. Before irradiation, lifetimes GaInP, GaAs, InGaAs subcell...

The results of studying the optical properties InGaAs quantum dots are presented. Single-layer with a height 5.3, 3.6 and 2.6 monolayers, as well three-stacked layers tunnel-uncoupled monolayers were formed by molecular-beam epitaxy according to Stransky--Krastanov mechanism on GaAs substrates, using partial capping annealing technique. A decrease in size makes it possible carry out blueshift p...