Titania films were grown on BaTiO3 (BTO) substrates by pulsed laser deposition to create (001)Anatase||(100)BTO, (100)Rutile||(111)BTO, and (110)Rutile||(110)BTO heterostructures. The photochemical reactivity was evaluated by observing the amount of silver reduced by each film under identical conditions. The thickest films (100 nm) had reactivities that varied with the phase of titania and the ...

Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr0.52Ti0.48)O3] substrate pl...

Ferroelectric thin-films are highly desirable for their applications on energy conversion, data storage and so on. Molecular ferroelectrics had been expected to be a better candidate compared to conventional ferroelectric ceramics, due to its simple and low-cost film-processability. However, most molecular ferroelectrics are mono-polar-axial, and the polar axes of the entire thin-film must be w...

Transition metal ferrites such as CoFe2O4, possessing a large magnetostriction coefficient and high Curie temperature (Tc > 600 K), are excellent candidates for creating magnetic order at the nanoscale and provide a pathway to the fabrication of uniform particle-matrix films with optimized potential for magnetoelectric coupling. Here, a series of 0-3 type nanocomposite thin films composed of fe...

Biaxial strain is known to induce ferroelectricity in thin films of nominally nonferroelectric materials such as SrTiO3. By a direct comparison of the strained and strain-free SrTiO3 films using dielectric, ferroelectric, Raman, nonlinear optical and nanoscale piezoelectric property measurements, we conclude that all SrTiO3 films and bulk crystals are relaxor ferroelectrics, and the role of str...

Keywords: HfO 2 Analytical model Surface potential Ferroelectric Nonvolatile memory Fe-TFET a b s t r a c t The implementation and operation of the nonvolatile ferroelectric memory (NVM) tunnel field effect transistors with silicon-doped HfO 2 is proposed and theoretically examined for the first time, showing that ferroelectric nonvolatile tunnel field effect transistor (Fe-TFET) can operate as...

Engineering domains in ferroelectric thin films is crucial for realizing technological applications including non-volatile data storage and solar energy harvesting. Size and shape of domains strongly depend on the electrical and mechanical boundary conditions. Here we report the origin of nonswitchable polarization under external bias that leads to energetically unfavourable head-to-head domain...

Scanning force microscopy (SFM) is becoming a powerful technique with great potential both for imaging and for control of domain structures in ferroelectric materials at the nanometer scale. Application of SFM to visualization of domain structures in ferroelectric thin films is described. Imaging methods of ferroelectric domains are based on the detection of surface charges in the noncontact mo...

We have deposited nearly stress-free single-crystal thin films of 001 Pb Mn,Nb O3–Pb Zr,Ti O3 PMnN-PZT on 001 MgO substrates by rf-magnetron sputtering using a quenching process after the film growth. It is found that single c-domain/single-crystal thin films of PMnN-PZT containing 5%–10% PMnN show a strong hard ferroelectric response with 2Ec 400 kV /cm and Ps 70 C /cm2. GHz-range film bulk ac...

Thin films of ferroelectric strontium-doped lead zirconate titanate [PSZT, (Pb(0.92)Sr(0.08))(Zr(0.65)Ti(0.35))O(3)] deposited by RF magnetron sputtering have been analyzed by in situ analysis techniques. The in situ techniques employed for this study include micro-Raman spectroscopy and X-ray diffraction (XRD), and variations in thin film structure and orientations for temperatures up to 350 d...