Graphene is a material with great promise for several applications within electronics. However, using graphene in any such application requires its integration stack of thin layers materials. The ideal structure has fully saturated surface without binding sites chemisorption growth species, making film on highly challenging. Herein, an attempt to deposit very AlN atomic layer deposition approac...

We report on the growth of high-aspect-ratio (approximately > 300) zinc sulfide nanotubes with variable, precisely tunable, wall thicknesses and tube diameters into highly ordered pores of anodic alumina templates by atomic layer deposition (ALD) at temperatures as low as 75 degrees C. Various characterization techniques are employed to gain information on the composition, morphology and crysta...

Atomic layer deposition (ALD) is a process for depositing highly uniform and conformal thin films by alternating exposures of a surface to vapours of two chemical reactants. ALD processes have been successfully demonstrated for many metal compounds, but for only very few pure metals. Here we demonstrate processes for the ALD of transition metals including copper, cobalt, iron and nickel. Homole...