Reliability is a fundamental requirement in microprocessors that guarantees correct execution over their lifetimes. The reliability-related design rules depend on the process technology and device operating conditions. To meet reliability requirements, advanced nodes impose challenging rules, which place major burden VLSI implementation flow because they severe physical constraints. This paper ...

The phenomena of electrical conductivity and electromigration in metallic systems are related, since both cases the basic physical process is scattering conduction electrons by metal ions. Numerous searches have been made for equations connecting with electromigration. In case a liquid metal, when using Drude–Sommerfeld (DS) equation, it was not possible to obtain quantitative relationship betw...

Au deposition on Si(110) at temperature higher than 633 K leads to the formation of elongated liquid nano-droplets. In this work we show that under an electric field, droplets move along [1–10] axis towards positive electrode by electromigration. During motion, they dissolve substrate forming a hole underneath and nanowire behind them. We develop model highlighting driving force these processes...

In a previous paper (Ghosal and Chen in Bull. Math. Biol. 72:2047, 2010), it was shown that the evolution of the solute concentration in capillary electrophoresis is described by a nonlinear wave equation that reduced to Burger's equation if the nonlinearity was weak. It was assumed that only strong electrolytes (fully dissociated) were present. In the present paper, it is shown that the same g...

Ž . We study the modification of gold thin film surface by Scanning Tunnelling Microscopy STM and grazing incidence X-ray to understand the process of electromigration. As a result of the applied current we have observed by STM a large movement of matter in the film surface that results in a strong rearrangement and modification of all the surface structures in a matter of minutes. We obtained ...

Electromigration tests of SnAg solder bump samples with 15 μm bump height and Cu under-bump-metallization (UBM) were performed. The test conditions were 1.45 ˆ 104 A/cm2 at 185 ̋C and 1.20 ˆ 104 A/cm2 at 0 ̋C. A porous Cu3Sn intermetallic compound (IMC) structure was observed to form within the bumps after several hundred hours of current stressing. In direct comparison, annealing alone at 185 ...

Electric-field-induced resistive switching in metal-oxide interfaces has attracted extensive recent interest. While many agree that lattice defects play a key role, details of the physical processes are far from clear. There is debate, for example, regarding whether the electromigration of pre-existing point defects or the field-created larger lattice defects dominates the switch. We investigat...

Electromigration, as one of the main failure mechanismus of VLSI circuits, is of great concern to microelectronics industry. The effects of grain morphology as well as texture can be studied on a mesoscale by Automated Crystal Orientation Mapping (ACOM) in the SEM since it provides a detailed description of the microstructure. Textural functions (e.g. pole figures, ODF, MODF), statistical param...

Surface modification is an essential step in engineering materials that can withstand the increasingly aggressive environments encountered in various modern energy-conversion systems and chemical processing industries. However, most traditional technologies exhibit disadvantages such as slow diffusion kinetics, processing difficulties or compatibility issues. Here, we present a general strategy...