The removal of chlorobenzene using a dielectric barrier discharge (DBD) reactor coupled with CuO/γ-Al2O3 catalysts was investigated in this paper. coupling CuO enhanced the degradation and complete oxidation ability DBD reactor, especially under low voltage conditions. characterization catalyst carried out to understand interaction between plasma discharge. effects flow rate power on these para...

The development of numerical techniques now permits us to analyze complex structures such as dielectric resonator filters and planar passive elements for coplanar monolithic microwave integrated circuits. In this paper, we describe a novel method for designing dielectric resonator filters. Then a Chebychev band pass filter is designed by coaxially placing high-Q TM01Q dielectric resonators ...

Porous dielectric materials, such as SiOCH, are used as the insulator in interconnect wiring in microelectronics devices to lower the dielectric constant and so decrease the RC time delay. Sealing of the pores (up to a few nm in diameter) is necessary to prevent degradation of the low-k properties during subsequent processing steps by diffusion of reactants through the pores into the material. ...

The ion implantation of heavy dopant species through very thin silicon oxide gate insulators d?grades the insulating properties of the oxide inducing an enhanced leakage current in MOS siructures as well as a decrease of the dielectric breakdown voltage. In the present work we study quantitatively the possible physico-chemical causes of these degradation phenomena a l d of their recovery by the...

Binary and ternary composites were synthesized using a polyester matrix reinforced by two types of carbon inclusions, namely, nanotubes (CNT) graphite (Gt) (CNT/Gt/Polyester). Thermal analyses performed, thermogravimetry differential scanning calorimetry, which allowed us to observe significant changes in glass transition temperatures degradation the composites. Dielectric measurements performe...

For the diagnosis of inhomogeneous insulation degradation in electric cables, the estimation of distributed shunt conductance is studied in this paper. Gradual growth of the shunt conductance is a consequence of degradation of the dielectric properties of the insulator. The proposed estimation method is based on voltage and current measurements at a single end of the cable. After the linearizat...

Abstract: Improvement of Hf-based high-k gate dielectrics by incorporating Ta and La in HfO2 are investigated systematically. The main issues of pure HfO2 gate dielectric, including low crystallization temperature, channel mobility degradation, and bias temperature instability (BTI) degradation, can be effectively improved in HfTaO and HfLaO. Particularly, HfLaO with appropriate metal gate mate...

Heterostructured powders composed of microcrystalline PbTiO3 cores coated with nanostructured TiO2 shells were prepared by a sol–gel method. When exposed to visible light (l 4 420 nm), the heterostructured powder degrades methylene blue at a rate 4.8 times greater than PbTiO3, TiO2, or mechanical mixtures of the phases. The rate at which the heterostructured powder degrades methylene blue depen...

Lee, Yi-Mu. Breakdown and reliability of CMOS devices with stacked oxide/nitride and oxynitride gate dielectrics prepared by RPECVD. (Under the direction of Professor Gerald Lucovsky) Remote-plasma-enhanced CVD (RPECVD) silicon nitride and silicon oxynitride alloys have been proposed to be the attractive alternatives to replace conventional oxides as the CMOS logic and memory technology node is...