A recent numerical approach for the study of three-dimensional instabilities of axisymmetric melt flows in Czochralski crucible is described. The convergence studies and comparisons with previously published experimental and numerical data are reported. Convergence requirements are estimated. Basing on a certain experimental configuration we give an example of the stability diagram which shows ...

2014 We present results concerning sample dependence of not only the modulation wave vector, but also of the amplitude of the order parameter describing the N (A21am) ~ incommensurate phase transition in BaMnF4: X-ray diffraction, Cp (« DSC »), and birefringence measurements were performed on a wide set of crystals which were synthetized by Bridgman, Czochralski, and hydrothermal methods. The e...

Abstract. In this paper we present a model for computing thermal stress inside a crystal with facets. Using a systematical perturbation analysis, a semi-analytical thermal stress solution is obtained for constrained directional growth with small lateral heat flux. Our solution can be applied to crystals grown by various growth techniques such as the Czochralski method. The semianalytical nature...

The effect of stress (exerted by hydrostatic pressure of argon ambient enhanced up to 1.2 GPa) on the creation of oxygen-related defects in annealed Czochralski grown silicon (Cz-Si) was investigated. Concentrations of oxygen interstitials and of dislocations in Cz-Si samples with before-created nucleation centres for oxygen precipitation were markedly lower after pressure treatment at 1120 to ...

The lifetime degradation induced by light illumination or carrier injection which is observed in Czochralski-grown silicon (Cz-Si) leads to a significant decrease of solar cell efficiency. In this paper, realistic simulations of industrial type solar cells are performed by a simple empirical expression describing bulk lifetime as a function of the doping concentration. The optimal doping concen...