Stretching DNA in nanochannels allows for direct, visual studies of genomic DNA at the single molecule level. In order to facilitate the study of the interaction of linear DNA with proteins in nanochannels, we have implemented a highly effective passivation scheme based on lipid bilayers. We show long-term passivation of nanochannel surfaces to several relevant reagents and demonstrate that the...

Silicon surface passivation of hydrogenated silicon (Si:H) thin films deposited by radio frequency (RF) and direct current (DC) plasma process was investigated by measuring effective minority carrier lifetime (τeff) on Si (100) and (111) wafers and correlated with the silicon heterojunction (SHJ) cell performances. Apparently the higher ion bombardment in DC compared to RF plasma during growth ...

The problem of parasitic residual deposition on the passivation layer in electroless deposition process is studied in this paper. The characterization analysis tools involved are focused ion beam (FIB), scanning electron microscopy (SEM), electron dispersive Xray (EDX) and metallurgical interface analysis. Samples were identified as either good or bad prior to the characterization process via a...

The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hyster...

Silicon nanowire (SiNW) arrays for radial p-n junction solar cells offer potential advantages of light trapping effects and quick charge collection. Nevertheless, lower open circuit voltages (Voc) lead to lower energy conversion efficiencies. In such cases, the performance of the solar cells depends critically on the quality of the SiNW interfaces. In this study, SiNW core-shell solar cells hav...

Ultra-thin AlN/GaN heterostructure field-effect transistors (HFETs) with, and without, SiN passivation were fabricated by the same growth and device processes. Based on the measured DC characteristics, including the capacitance-voltage (C-V) and output current-voltage (I-V) curves, the variation of electron mobility with gate bias was found to be quite different for devices with, and without, S...

Corrosion resistance and electrical conductivity of stainless steel bipolar plate remains a big challenge while it has been regarded as the most promising candidate for proton exchange membrane fuel cell. The purpose this paper is to study effects pickling passivation by sulfuric acid mixture nitric fluoric acids, respectively, on corrosion 316L (SS316L) plate. First, specimens SS316L performed...